Article
Chemistry, Physical
Mansi Agrawal, Anubha Jain, Vishakha Kaushik, Akhilesh Pandey, B. R. Mehta, R. Muralidharan
Summary: In this study, catalyst-free GaN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam epitaxy, followed by the deposition of a few layers of MoS2 by chemical vapor deposition. The morphology and vibrational properties of the MoS2/GaN nanowires on Si (111) substrates were analyzed using scanning electron microscopy and Raman spectroscopy. The results indicate the potential of MoS2/GaN nanowires heterojunction for future optoelectronic devices due to their exceptional structural and vibrational properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Wenwu Pan, Junliang Liu, Zekai Zhang, Renjie Gu, Alexandra Suvorova, Sarah Gain, Han Wang, Ziyuan Li, Lan Fu, Lorenzo Faraone, Wen Lei
Summary: The study focuses on van der Waals epitaxy of CdSe thin films on mica substrates and the development of etch-free layer transfer technology for flexible photodetectors. The CdSe thin films demonstrate excellent device performance, making them suitable for full-color imaging.
Article
Crystallography
K. Ben Saddik, A. F. Brana, N. Lopez, B. J. Garcia, S. Fernandez-Garrido
Summary: A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy can be achieved by adjusting the concentration or flux of diluted precursors. The incorporation of Si shows a linear dependence on the diluted-precursor flux, while C doping exhibits a superlinear behavior. Analysis by low-temperature photoluminescence spectroscopy suggests that diluting DTBSi or CBr4 with H-2 does not affect the electrical and optical properties of GaAs.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Chemistry, Multidisciplinary
Babak Nikoobakht, Aaron C. Johnston-Peck, David Laleyan, Ping Wang, Zetian Mi
Summary: A novel approach was presented for growth of surface-directed spinel ZnGa2O4 and beta-Ga2O3 nanofins coated with a non-polar GaN shell, utilizing a vacancy-assisted mechanism for exchange between Zn and Ga. The predictability over surface registries and tunable porosity of the core/shell fins is anticipated to be significant for various applications.
Article
Physics, Condensed Matter
M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche, J. Zuniga-Perez
Summary: The diffusion at the AlN/Al0.3Ga0.7N interface was found to be weakly concentration-dependent and more strain-dependent. Unintentional annealing during long growth runs resulted in the formation of AlGaN graded layers at each interface.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Physics, Applied
Kingsley Egbo, Jonas Laehnemann, Andreas Falkenstein, Joel Varley, Oliver Bierwagen
Summary: (La and Ga)-doped tin monoxide thin films were grown with dopant concentrations ranging from approximate to 5 x 10(18) to 2 x 10(21) cm(-3). Ga acted as an acceptor and La as a compensating donor in the doped samples. The results show the possibilities of controlling the hole concentration in p-type SnO, which can be useful for a range of optoelectronic and gas-sensing applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Crystallography
Nidhi Gupta, Madhav Ranganathan
Summary: The morphology of self-assembled quantum dots in Ge/Si heteroepitaxial systems is influenced by the intermixing of silicon and germanium. Simulations demonstrate that intermixing reduces strain and slows down the formation of quantum dots. Composition maps provide clear evidence of the relationship between strain and intermixing.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Chemistry, Physical
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw Skierbiszewski
Summary: Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth, with the role of the adlayer in dopant incorporation in GaN being unexplored. Experimental study shows that the presence of atomically thin gallium or indium layers dramatically affects Ge incorporation in GaN, with indium surfactant layer promoting Ge incorporation while gallium surfactant layer promotes segregation of Ge to the surface. Understanding the role of surfactants is crucial for controlling GaN doping and achieving high n-type doping levels using Ge.
Article
Materials Science, Multidisciplinary
Nutthapong Discharoen, Sakuntam Sanorpim, Noppadon Nuntawong, Visittapong Yordsri, Suphakan Kijamnajsuk, Kentaro Onabe
Summary: Cubic AlN films were successfully grown on MgO substrates using a two-step cubic GaN buffer layer. The two-step buffer layer was found to play a crucial role in the epitaxial growth of c-AlN, resulting in improved crystallinity compared to one-step and nonGaN buffer layers.
Article
Crystallography
A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, D. Reuter
Summary: This study compares different In-deposition schemes to achieve low-density self-assembled InAs quantum dots (QDs) on GaAs(100) substrates. The results show that homogeneous In deposition combined with annealing can achieve high-density QD distribution, while inhomogeneous deposition leads to lower and less reproducible densities of QDs.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Chemistry, Physical
Dmitry Rogilo, Sergey Sitnikov, Sergey Ponomarev, Dmitry Sheglov, Liudmila Fedina, Alexander Latyshev
Summary: Through in situ reflection electron microscopy and ex situ atomic force microscopy, the research investigated the morphological stability of large-scale Si(111)-7x7 terraces during silicon growth and etching by oxygen and selenium. The study identified three modes of morphological instability, with oxygen etching leading to slow multilayer development and selenium-induced etching preserving flat surface morphology with periodic 2D vacancy island formation. Additionally, on step-bunched surfaces, Si or Se adatom diffusion to step bunches results in self-organized pyramidlike or valley-like morphology during Si growth or Se-induced etching.
APPLIED SURFACE SCIENCE
(2021)
Article
Crystallography
Supachok Zon, Supachok Thainoi, Suwit Kiravittaya, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow
Summary: The evolution of lateral InSb nanowires on CdTe (001) substrate by increasing the InSb thickness is reported. The InSb nanowires obtained at 10-nm growth exhibited a narrow lateral width of approximately 70 nm and a high nanowire density of around 18 nm^-1. The growth evolution of InSb nanowires was described based on atomic force microscopy characterization. X-ray diffraction analysis revealed the existence of intrinsic strain at the interface and top InSb layer. The observed strong polarization-dependent photoluminescence of the nanowires can be attributed to shape anisotropy.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Crystallography
M. Albert, C. Golla, C. Meier
Summary: Temperature management of substrates is crucial for molecular beam epitaxy and thin film deposition techniques. This work compares different in-situ methods for measuring substrate temperature and growth rate of wide band semiconductors like ZnO and GaN. By combining in-situ and ex-situ measurements with simulation data, characteristic behaviors of common substrate mounting techniques for Al2O3 and ZnO substrates are demonstrated, along with an investigation into the performance of reflectometry-based growth rate determination during ZnO homoepitaxy.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Menglin Chang, Jiayi Li, Ziyuan Yuan, Kedong Zhang, Chen Li, Yu Deng, Hong Lu, Yan-Feng Chen
Summary: Single-crystalline aluminum films were grown on Si substrates by molecular beam epitaxy to study the growth mechanism and demonstrate interface modulation. Lowering the growth temperature improved the surface wetting. Post-annealing effectively eliminated twins within a thin aluminum film. The best twin-free aluminum film with atomically sharp Al/Si interface was achieved using a two-step method. Ellipsometry measurements showed overall reduction in ε2 compared to Palik's values, especially in the UV regions.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Shunsuke Narita, Yudai Yamashita, Sho Aonuki, Noriyuki Saitoh, Kaoru Toko, Takashi Suemasu
Summary: Barium disilicide (BaSi2) is an emerging material for light absorber layers in solar cell applications. The effect of post-annealing on lightly B-doped BaSi2 films grown under different Ba-to-Si deposition rate ratios was investigated. The samples grown in Ba-rich conditions showed n-type conductivity, while those grown in Si-rich conditions showed p-type conductivity and possibly formed crystalline Si islands around the interface.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Materials Science, Multidisciplinary
Pengfei Zhou, Po Kee Wong, Pengda Niu, Mingpeng Chen, Chi Tat Kwok, Yuxin Tang, Ruidi Li, Shuangpeng Wang, Hui Pan
Summary: Alkaline water electrolysis is a prospective method for green hydrogen production, but its efficiency is low. The use of anodized high-entropy alloy AlCoCrFeNi as an efficient electrode shows ultra-high catalytic activity and stability, making it suitable for industrial water electrolysis for hydrogen production.
SCIENCE CHINA-MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Bao-Shi Qiao, Su-Yun Wang, Zhi-Hong Zhang, Zhen-Dong Lian, Zhi-Yao Zheng, Zhi-Peng Wei, Lin Li, Kar Wei Ng, Shuang-Peng Wang, Zhi-Bo Liu
Summary: Stacked 2D perovskites offer new possibilities for next generation photodetectors with enhanced features. This study demonstrates a bifunctional perovskite-based photovoltaic detector capable of demultiplexing two wavelengths. By utilizing the photosensitive and dielectric properties of 2D perovskite, the device exhibits different modes of operation. It shows continuous photoresponse under 405 nm and a transient spike response to longer wavelength visible light. This work provides a new strategy for multispectral detection and demultiplexing, which can improve data transfer rates and encrypted communications.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Jun Yan, Qi Zheng, Shuang-Peng Wang, Yong-Zhi Tian, Wei-Qiang Gong, Feng Gao, Ji-Jun Qiu, Lin Li, Shu-Hui Yang, Mao-Sheng Cao
Summary: High-efficiency electromagnetic functional materials are essential for high-performance electromagnetic absorbers and devices in various fields. Finding and realizing these materials pose great challenges.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Di Liu, Lulu Qiao, Yuyun Chen, Pengfei Zhou, Jinxian Feng, Chon Chio Leong, Kar Wei Ng, Shengjie Peng, Shuangpeng Wang, Weng Fai Ip, Hui Pan
Summary: In this study, the incorporation of manganese into the Co3O4 lattice is found to achieve high activity and selectivity in electrocatalytic nitrate reduction reaction (e-NO3RR). The Mn-incorporated Co3O4 nanotubes exhibit remarkable e-NO3RR activity with a high ammonia yield rate of 35 mg h-1 cm-2 and excellent selectivity with a Faraday efficiency for ammonia up to 99.5% in neutral media, outperforming transition-metal oxides.
APPLIED CATALYSIS B-ENVIRONMENTAL
(2023)
Article
Chemistry, Physical
Wushuang Han, Kewei Liu, Jialin Yang, Xing Chen, Qiu Ai, Yongxue Zhu, Zhen Cheng, Binghui Li, Lei Liu, Dezhen Shen
Summary: This study demonstrates a high-performance self-powered UV-visible photodetector enhanced by the ferroelectric effect on amorphous BaTiO3/p-Si heterojunction. The device achieves significantly improved responsivities of 14 mA/W, 27 mA/W, and 223 mA/W at 254 nm, 365 nm, and 600 nm, respectively, outperforming other BaTiO3-based self-driven photodetectors reported. The device also exhibits a fast response speed with rising/fall times of 450 μs/460 μs at 254 nm and 80 μs/140 μs at 600 nm. The defect-assisted recombination of photogenerated carriers at the amorphous BaTiO3/p-Si interface and grain boundaries enables the visualization of transient photocurrent spikes under 254 nm illumination. This work presents a novel strategy for the design and research of high-performance self-powered photodetectors.
APPLIED SURFACE SCIENCE
(2023)
Review
Engineering, Environmental
Mingpeng Chen, Di Liu, Lulu Qiao, Pengfei Zhou, Jinxian Feng, Kar Wei Ng, Qingju Liu, Shuangpeng Wang, Hui Pan
Summary: The dynamical processes in electrochemical reactions in electrocatalysis are not well understood, which leads to wasted efforts in the design of electrocatalysts. However, in-situ/operando Raman technique can provide guidance for the design of electrocatalysts. This review summarizes recent advances of in-situ/operando Raman studies in different electrocatalytic systems and their applications in understanding the mechanisms.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Chemistry, Physical
Di Liu, Jia Zhao, Youchao Kong, Haoqiang Ai, Haoyun Bai, Chon Chio Leong, Kin Ho Lo, Shuangpeng Wang, Weng Fai Ip, Sen Lin, Hui Pan
Summary: This study investigates the production of C2 fuels through the electrocatalytic carbon monoxide reduction reaction (e-CORR) using dual-atom catalysts (DACs). Methanol, ethanol, ethylene, and acetate can be produced on DAC-Co and DAC-Cu, but with different preferences. The presence of solvent enhances adsorption and influences the protonation steps, thus affecting the performance and selectivity of e-CORR on DACs.
Article
Chemistry, Physical
Xin Zhang, Hui Bao, Cuili Chen, Xian-Gang Wu, Menglin Li, Wenyu Ji, Shuangpeng Wang, Haizheng Zhong
Summary: The operational stability of red emissive CdSe QLEDs was investigated at different applied voltages. The device luminance quickly decreases when loaded around the turn-on voltage, but recovers after unloading or slight heat treatment, known as the fatigue effects of operational QLED. The decrease in device luminance is attributed to the reduction of quantum yield in quantum dots.
JOURNAL OF CHEMICAL PHYSICS
(2023)
Article
Chemistry, Physical
Hui Bao, Cuili Chen, Yongqi Cao, Shuai Chang, Shuangpeng Wang, Haizheng Zhong
Summary: In this study, the charge accumulation and recombination in an operational QLED were quantitatively determined using time-resolved electroluminescence (TREL) spectroscopy. Time-resolved current (TRC) measurement was introduced and simulated using an equivalent circuit model, including a series resistance, a parallel resistance, and a capacitance. The key processes in a typical TREL spectra were modeled, and the stages of delay, rising, and decay were correlated to charge accumulations, charge injection and recombination, and charge release and recombination, respectively. The electroluminescence recombination rate was derived by fitting the rising stage curves in the TREL spectra, providing an intrinsic parameter of the emissive materials.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Physics, Multidisciplinary
Zhen Cheng, Kewei Liu, Baoshi Qiao, Jialin Yang, Xing Chen, Qiu Ai, Yongxue Zhu, Binghui Li, Lei Liu, Dezhen Shen
Summary: Heterojunctions consisting of hybrid organic-inorganic lead halide perovskites and other semiconductors have attracted attention for their potential application in photodetectors. However, their performance is limited by the low crystalline quality of perovskites and the difficulty in adjusting response spectra. This study successfully fabricated high quality CH3NH3PbCl3 micro-sized crystals on one side of individual ZnO microwires to form a heterojunction photodetector, which showed low dark current and rapid response speed. The modulation of response spectra and responsivity can be achieved by front or back illumination due to self-filtering properties, providing a promising method for high-performance heterojunction photodetectors.
Article
Materials Science, Multidisciplinary
Chunrong Zhu, Chenjing Zhao, Fang Yuan, Yuren Li, Jingrui Li, Xiaoyun Liu, Lu Li, Hua Dong, Lihe Yan, Shuangpeng Wang, Bo Jiao, Zhaoxin Wu
Summary: This study introduces a subtly functionalized compound, methoxylated phenethylammonium bromide (y-MeO-PEABr), to improve the performance of sky-blue quasi-2D perovskite materials. The compound induces an upward shift of the energy levels and reduces the holes injection barrier, achieving better charge balance. The introduction of large y-MeO-PEA(+) cations effectively suppresses the formation of undesirable phases and improves energy transfer. The sky-blue quasi-2D PeLED based on 2-MeO-PEABr achieves a maximum external quantum efficiency of 10.85% at 486 nm. This work suggests a potential guide for designing high-performance blue quasi-2D PeLEDs using novel organic spacer cations.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Chenjing Zhao, Chunrong Zhu, Yue Yu, Wenhao Xue, Xiaoyun Liu, Fang Yuan, Jinfei Dai, Shuangpeng Wang, Bo Jiao, Zhaoxin Wu
Summary: By using 2-thiophenepropylamine bromide (ThPABr) as a multifunctional ligand in CsPbBr3 quantum dots, the film's photoluminescence quantum yield (PLQY) was increased to 83%, and the green LED exhibited significant performance improvement, including ultrahigh spectral stability, a maximum external quantum efficiency of 10.5%, and an extended operating lifetime that is 5 times longer than the reference sample.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Pengfei Zhou, Songbo Chen, Haoyun Bai, Chunfa Liu, Jinxian Feng, Di Liu, Lulu Qiao, Shuangpeng Wang, Hui Pan
Summary: In this study, a simple spontaneous corrosion and cyclic voltammetry (CV) activation method was used to fabricate Zn-incorporated NiFe layered double hydroxide (LDH) on commercial NiFe foam, which showed excellent oxygen evolution reaction (OER) performance.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2023)
Article
Chemistry, Physical
Xingshuai Lv, Junxian Liu, Liangzhi Kou, Kar Wei Ng, Shuangpeng Wang, Thomas Frauenheim, Hui Pan
Summary: This study demonstrates that the use of three-dimensional confined dual site environment can significantly improve the turnover frequency for NH3 production, surpassing the limitations of energy-scaling relations and enabling a milder Haber-Bosch process.
Article
Chemistry, Physical
Sujuan Wang, Ligan Qi, Zhonghui Xia, Wenhai Wang, Dewu Yue, Shuangpeng Wang, Shichen Su
Summary: In this study, a polarization-sensitive detector based on a MoTe2/WTe2 heterojunction was presented. It achieved wide spectral detection and high polarization sensitivity, showing potential for developing high-performance optoelectronic devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)
