Article
Engineering, Electrical & Electronic
Tianyi Ma, Yu Zhu, Pambiang Abel Dainone, Tongxin Chen, Xavier Devaux, Caihua Wan, Sylvie Migot, Gwladys Lengaigne, Michel Vergnat, Yu Yan, Xiufeng Han, Yuan Lu
Summary: This study demonstrates a large sign reversal of tunneling magnetoresistance (TMR) in a Fe/MgAlOx/Fe4N magnetic tunnel junction (MTJ) controlled by the bias voltage. The sign reversal effect is doubled compared to Fe/MgO/Fe4N MTJs, thanks to the better lattice mismatch and less N diffusion. First-principles calculations reveal that the change of TMR sign originates from different symmetry-dependent tunneling channels between Fe and Fe4N electrodes under opposite bias voltages.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Tatsuya Yamamoto, Takayuki Nozaki, Kay Yakushiji, Shingo Tamaru, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa
Summary: The study shows that Ta layer in MgO/Ta/CoFeB/MgO junctions can enhance the PMA of magnetic films and eliminate the diffusion of Ta, leading to superior thermal stability and the release of VCMA effect. In addition, the Co-Fe compositional variation in CoFeB layer associated with Ta insertion is related to the changes in PMA and VCMA.
Review
Biochemistry & Molecular Biology
Dereje Seifu, Qing Peng, Kit Sze, Jie Hou, Fei Gao, Yucheng Lan
Summary: In this review, the functionalities of MgO-based magnetic tunnel junction (MTJ) devices under different electromagnetic irradiation environments are summarized, with a focus on gamma-ray radiation. The effects of radiation on MgO tunnel barriers, magnetic layers, and interfaces are explored to understand the origin of their tolerance. This review enhances our understanding of the radiation tolerance of MgO-based MTJs, improves the design of these devices with better tolerances, and provides information to minimize the risks of irradiation in various environments.
Article
Nanoscience & Nanotechnology
Bao-Huei Huang, Chia-Chia Chao, Yu-Hui Tang
Summary: In this study, a divide-and-conquer method was developed under the framework of first-principles calculation to address the computational challenges of solving Hamiltonian of large devices. The implementation revealed the oscillatory decay of layer-resolved spin torques away from the MgO/Fe interface and suggested a very thin Fe layer thickness below 2 nm for efficient current-driven magnetization switch. The newly developed JunPy-DC calculation efficiently resolves the current self-consistent difficulties in noncollinear spin torque effects for novel spintronic applications with complex magnetic heterostructures.
Article
Chemistry, Multidisciplinary
Geunwoo Kim, Soogil Lee, Sanghwa Lee, Byonggwon Song, Byung-Kyu Lee, Duhyun Lee, Jin Seo Lee, Min Hyeok Lee, Young Keun Kim, Byong-Guk Park
Summary: This study investigates the effects of annealing on the tunnel magnetoresistance ratio in CoFeB/MgO/CoFeB-based magnetic tunnel junctions with different capping layers and correlates them with microstructural changes. The findings indicate that the proper selection of a capping layer can increase the annealing temperature of MTJs, making it compatible with the complementary metal-oxide-semiconductor backend process.
Article
Engineering, Electrical & Electronic
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki, Kay Yakushiji, Shingo Tamaru, Makoto Konoto, Shinji Yuasa
Summary: We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on φ300 mm thermally oxidized silicon wafers. The effect of deposition temperature on CoFeB layers and its impact on nanostructure, magnetic, and magneto-transport properties of MTJs were investigated. Cryogenic deposition of CoFeB at 100 K resulted in enhancements of perpendicular magnetic anisotropy (PMA) and voltage-controlled magnetic anisotropy (VCMA) of the MTJs compared to room temperature deposition. Improved interfacial qualities at the MgO/CoFeB interfaces were observed with cryogenic temperature deposition.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Yukie Kitaoka, Hiroshi Imamura
Summary: Recent research has shown that the perpendicular magnetic anisotropy (PMA) of magnetoresistive random access memory (MRAM) can be significantly enhanced by inserting an ultrathin LiF layer at an Fe/MgO interface. First-principles calculations revealed that the PMA enhancement is mainly due to the suppression of Fe and O atom mixing at the interface. Additionally, in-plane Fe-F coupling contributes positively to the magnetocrystalline anisotropy energy (MAE), while Fe-O coupling has a negative contribution. These findings are valuable for the design of high-PMA materials.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2023)
Article
Crystallography
Hiroshi Sakurai, Manabu Takahashi, Kosuke Suzuki, Takuro Tamura, Satoshi Homma, Naruki Tsuji, Yoshiharu Sakurai
Summary: This study measured the anisotropy of Magnetic Compton profiles (MCP) in Fe/MgO multilayers and compared it with band structure calculations. It was found that at the Fe/MgO interface, the |m| = 1 state in the minority band is suppressed, leading to the spin-polarized occupation of the |m| = 1 state. On the other hand, at the Fe/FeO interface of intentionally oxidized Fe/MgO multilayers, the occupations of the magnetic quantum number are almost equal in the majority and minority bands.
Article
Nanoscience & Nanotechnology
Sicong Jiang, Safdar Nazir, Kesong Yang
Summary: This study presents a high-throughput screening approach to find candidate Heusler/MgO material interfaces for spintronic applications. By utilizing open quantum material repositories and conducting large-scale ab initio calculations, the researchers identified five full-Heusler compounds and two half-Heusler compounds as promising candidates for designing p-MTJs.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Multidisciplinary
Qiuyang Li, Penghe Zhang, Haotian Li, Lina Chen, Kaiyuan Zhou, Chunjie Yan, Liyuan Li, Yongbing Xu, Weixin Zhang, Bo Liu, Hao Meng, Ronghua Liu, Youwei Du
Summary: Through experiments and simulations, it has been found that perpendicular anisotropy magnetic tunnel junctions (pMTJs) exhibit fast switching times and low write energies, and the switching time can be further reduced when the perpendicular magnetic anisotropy and damping constant of the free layer are lower within a certain range.
Article
Physics, Applied
Tatsuya Yamamoto, Tomohiro Ichinose, Jun Uzuhashi, Takayuki Nozaki, Tadakatsu Ohkubo, Kay Yakushiji, Shingo Tamaru, Hitoshi Kubota, Akio Fukushima, Kazuhiro Hono, Shinji Yuasa
Summary: In this study, we investigate the perpendicular magnetic anisotropy (PMA) in MgO/CoFeB (CFB)/MgO junctions by introducing an angstrom-thick Mo spacer layer. It is found that perpendicularly magnetized CFB/Mo/CFB films can be obtained for a wide range of CFB thicknesses, achieving a large PMA energy density. The voltage-controlled magnetic anisotropy effect shows a sign inversion between the 'top free' and 'bottom free' magnetic tunnel junctions, indicating the importance of the flatness of the CFB/MgO interface for improving the efficiency of the effect.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Jieyi Chen, Shoya Sakamoto, Hidetoshi Kosaki, Shinji Miwa
Summary: In this study, we investigate the effect of alkali halide layer insertion on perpendicular magnetic anisotropy (PMA) at the Fe/MgO interface by fabricating epitaxial Fe/alkali halide (LiF, NaCl, or CsI)/MgO multilayers using molecular beam epitaxy. It is found that an ultrathin LiF layer (0.1-0.4 nm) enhances interfacial PMA, while thicker LiF layer insertion (0.6-1 nm) weakens it. For CsI and NaCl cases, interfacial PMA energy decreases with increasing CsI or NaCl thickness. The study suggests that well-defined Fe-anion orbital hybridization achieved by good lattice matching and anion atoms with high electronegativities, such as F, are beneficial for interfacial PMA.
Article
Materials Science, Multidisciplinary
Wenbiao Zhang, Kequn Chi, Xiang Feng, Yinuo Shi, Zhou Li, Yun Xing, TieJun Zhou, Hao Meng, Bo Liu
Summary: Nitrogen doping in CoFe thin films can enhance the perpendicular magnetic anisotropy (PMA), but excess N doping can change the easy axis of magnetization to in-plane. The modulation of MAE through N doping and charge transfer between N and Co/Fe atoms contribute to the improvement of PMA in CoFe/MgO thin films.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2021)
Article
Physics, Applied
Ronghuan Xie, Shun Wang, Li Cai, Xiaotian Cui, Senmiao Liu, Qiang Cao, Changwen Zhang, Qikun Huang, Shishen Yan
Summary: Bulk spin-orbit torque (SOT) driven memristive switching is achieved in perpendicularly magnetized CoPt alloy films by breaking the inversion symmetry using a composition gradient. Analog-like magnetization switching with multiple intermediate states can be obtained by applying current pulses with different amplitudes or repetition number. The programmable magnetization manipulation and controllable switching probability dependent on pulse frequency or repetition number emulate the weight update of synapses and the integrate-and-fire function of neurons, making it a promising candidate for SOT-based neuromorphic hardware.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Zilu Wang, Pingzhi Li, Mouad Fattouhi, Yuxuan Yao, Youri L. W. Van Hees, Casper F. Schippers, Xueying Zhang, Reinoud Lavrijsen, Felipe Garcia-Sanchez, Eduardo Martinez, Albert Fert, Weisheng Zhao, Bert Koopmans
Summary: Field-free spin-orbit torque (SOT) switching of perpendicular synthetic antiferromagnets (p-SAFs) is achieved through the introduction of an interlayer with Dzyaloshinskii-Moriya interactions (DMIs). The existence of the DMI interlayer is experimentally confirmed, and deterministic field-free switching is demonstrated. The proposed strategy is compatible with magnetic tunnel junction device structure and provides a method for high-performance SOT devices based on p-SAFs.
CELL REPORTS PHYSICAL SCIENCE
(2023)
Article
Physics, Applied
Ivan I. Khaliava, Alexander L. Khamets, Igor V. Safronov, Andrew B. Filonov, Takashi Suemasu, Dmitri B. Migas
Summary: We used nonequilibrium molecular dynamics to study the effect of morphology on the phonon thermal conductivity of Si/Ge superlattice nanowires with different orientations. The 112-oriented nanowires showed the lowest thermal conductivity due to their unique structure featuring effective phonon-surface and phonon-interface scattering. Comparison with other types of nanowires revealed that the superlattice morphology is the most efficient in reducing thermal conductivity.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Yuguang Cao, Jean-Marie Mouesca, Serge Gambarelli, Takashi Suemasu
Summary: Barium disilicide (BaSi2) is a promising material for thin-film solar cells. In this study, boron was used as a p-type impurity in BaSi2 and its impact on the electrical and optical properties of solar cells was investigated. The results show that interstitial boron defects have lower formation energy compared to boron in Si vacancy sites. Additionally, the hyperfine coupling constants of Ba-137 with different boron defects suggest that they can be identified using electron paramagnetic resonance.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Rui Du, Sho Aonuki, Hayato Hasebe, Kazuki Kido, Haruki Takenaka, Kaoru Toko, Masami Mesuda, Takashi Suemasu
Summary: Sputter-deposited polycrystalline BaSi2 films capped with a 5 nm thick a-SiC layer exhibited high photoresponsivity, indicating that the a-SiC layer acts as a capping layer to prevent surface oxidation of BaSi2. The a-SiC layer is considered as an electron transport layer (ETL) in the BaSi2 light absorber layer/a-SiC interlayer/TiN contact structure, based on the measured absorption edge, electron affinity, and work function of the respective layers. Using a 10 nm thick p(+)-BaSi2 layer as a hole transport layer, the BaSi2/a-SiC layered structure significantly affects the performance of a BaSi2-pn homojunction solar cell, achieving an efficiency of 22% for a 500 nm thick BaSi2 light absorber layer, as predicted by a one-dimensional device simulator (AFORS-HET v2.5).
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Takumi Horiuchi, Taro Komori, Tomohiro Yasuda, Taku Hirose, Kaoru Toko, Kenta Amemiya, Takashi Suemasu
Summary: In this study, we investigate the effect of Au doping on the magnetic structure of Mn4N films, and find a composition ratio-dependent sign reversal of the anomalous Hall effect at room temperature. X-ray magnetic circular dichroism measurement reveals a reversal of the magnetic moment of face-centered Mn atoms between x=0.1 and 0.2, becoming parallel to that of corner-site Mn atoms for x=0.2 and 0.3. This implies a ferrimagnetic-ferromagnetic phase transition in Au-doped Mn4N epitaxial films, similar to In-doped Mn4N epitaxial films.
Article
Nanoscience & Nanotechnology
Tomohiro Yasuda, Taro Komori, Taku Hirose, Takumi Horiuchi, Kaoru Toko, Takashi Suemasu
Summary: Rare-earth-free Mn4N is a promising spintronic material with ferrimagnetism, perpendicular magnetic anisotropy, and controllable magnetic properties. In this study, Mn4-xSnxN epitaxial films (x = 0-1.4) with thickness of about 25 nm were grown on MgO(001) substrates by molecular beam epitaxy. The lattice constants and magneto-transport properties of these films were investigated. The ratio of out-of-plane lattice constant c to in-plane lattice constant a, c/a, was less than 1 for x < 0.9, but changed to more than 1 for x = 1.0. Surprisingly, the sign of the anomalous Hall effect changed twice with increasing x, indicating a variation in the magnetic structure of the Mn4-xSnxN films. Possible mechanisms for this magnetic structure change include magnetic compensation, ferrimagnetic-ferromagnetic phase transition, and formation of noncollinear magnetic structures.
Article
Physics, Applied
K. Nozawa, T. Ishiyama, T. Nishida, N. Saitoh, N. Yoshizawa, T. Suemasu, K. Toko
Summary: Using our solid-phase crystallization technology, we successfully synthesized n-type polycrystalline Ge thin films with the highest recorded electron mobility (450 cm(2) V-1 s(-1)) on insulating substrates. The density and barrier height of grain boundaries in the P-doped polycrystalline Ge layers were controlled by the underlayer type and a small amount of Sn addition. By growing at a low temperature (<400°C), we developed a GeSn layer on a heat-resistant polyimide film with the highest electron mobility (200 cm(2) V-1 s(-1)), directly on a flexible substrate. These achievements pave the way for high-performance polycrystalline Ge-based devices on inexpensive glass and flexible plastic substrates.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Shintaro Maeda, Takamitsu Ishiyama, Noriyuki Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru Toko
Summary: Remarkable progress has been made in recent years in germanium-based thin film transistors. This study investigates the control of interfacial nucleation and grain size enlargement to improve the performance of polycrystalline Ge thin films. By using a bilayer structure and Sn doping in Ge, the grain size was significantly increased, resulting in high hole mobility and concentration. These findings have the potential to lead to the development of low temperature Ge-based thin-film transistors with superior performance compared to single-crystal Si transistors, leading to innovations in display devices.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Chemistry, Physical
Keita Ito, Takumi Ichimura, Masahiro Hayashida, Takahiro Nishio, Sho Goto, Hiroaki Kura, Ryusei Sasaki, Masahito Tsujikawa, Masafumi Shirai, Tomoyuki Koganezawa, Masaki Mizuguchi, Yusuke Shimada, Toyohiko J. Konno, Hideto Yanagihara, Koki Takanashi
Summary: In this study, L10-FeNi(001) and L10-FeNi(110) films were successfully fabricated by denitriding FeNiN films. The crystal orientations and Fe-Ni long-range order of the FeNiN films strongly influenced the properties of the resulting L10-FeNi films. The N atoms escaped through the tetrahedral interstitial sites in the L10-FeNi structure.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Physical
D. K. Sarkar, M. Mottakin, A. K. Mahmud Hasan, V. Selvanathan, K. Sobayel, M. N. I. Khan, A. F. M. Masum Rabbani, M. Shahinuzzaman, Mohammod Aminuzzaman, Farah H. Anuar, Takashi Suemasu, Kamaruzzaman Sopian, Md. Akhtaruzzaman
Summary: Although perovskite solar cells (PSCs) have achieved a high efficiency of 25.7% after extensive research, their commercialization is hindered by the short lifespan of the organic part and charge transporting layers. To achieve long-term device stability, inorganic perovskite aligned with the hole transporting layer (HTL) could be an alternative. Delafossite CuCrO2 was synthesized using a green method and characterized. The simulation study using CuCrO2 as HTL in a Pb-free RbGeI3-based inorganic perovskite device showed a maximum efficiency of 23.8% under optimized conditions.
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY
(2023)
Article
Chemistry, Multidisciplinary
Jumpei G. Nakamura, Yukinobu Kawakita, Hirotaka Okabe, Bing Li, Koichiro Shimomura, Takashi Suemasu
Summary: Muon spin rotation (mu SR) experiments were conducted to investigate the temperature dependence of the short-range order or correlations of chromium spins in the paramagnetic phase of AgCrSe2. The results showed that short-range spin correlations developed below approximately 184 K, confirming controversial findings from previous quasi-elastic neutron scattering studies. The muon spin relaxation also exhibited a qualitative change and displayed significant missing asymmetry below around 89 K, indicating the presence of short-range spin order.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2023)
Article
Nanoscience & Nanotechnology
Weida Yin, Keita Ito, Yusuke Tsubowa, Masahito Tsujikawa, Masafumi Shirai, Koki Takanashi
Summary: The anomalous Nernst effect of epitaxial Fe4-xNixN films on MgAl2O4(001) substrates was studied. The Ni/Fe ratio (x) in Fe4-xNixN films was changed from 0 to 2.8, and the Fe4-xNixN phase decomposed into FeNi at x = 2.2. The anomalous Nernst coefficient (S-ANE) decreased and Seebeck coefficient increased with increasing x. The transverse thermoelectric conductivity (alpha(xy)) decreased with x, which dominated the change in S-ANE. First-principles calculations of Fe4N and Fe2.8Ni1.2N showed significant differences from experimental results, possibly due to extrinsic mechanisms.
Article
Physics, Applied
Tomohiro Yasuda, Kenta Amemiya, Takashi Suemasu
Summary: In this study, we successfully fabricated ultrathin Mn4N films with a thickness of around 4 nm and discovered a reversed sign of the anomalous Hall resistivity as the film thickness decreased. X-ray magnetic circular dichroism measurements revealed that the magnetic structure of Mn4N with a thickness of around 4 nm is different from that of conventional ferrimagnetic Mn4N films. These findings are of great importance for studying spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in Mn4N ultrathin films.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Takamitsu Ishiyama, Kota Igura, Takashi Suemasu, Kaoru Toko
Summary: Recent advancements in polycrystalline Ge layers formed through solid-phase crystallization have demonstrated higher carrier mobilities than single-crystal Si. This study thoroughly examines the phenomenon of metal-induced lateral crystallization in Ge, finding that 20 out of 24 tested metals promote low-temperature lateral growth on glass. The results, categorized by reaction type and growth morphology, have broad implications for various materials, with potential applications in developing next-generation thin-film devices on common and inexpensive substrates.
MATERIALS & DESIGN
(2023)
Article
Engineering, Electrical & Electronic
Koki Nozawa, Takeshi Nishida, Takamitsu Ishiyama, Takashi Suemasu, Kaoru Toko
Summary: The carrier mobility of polycrystalline Ge thin-film transistors has been greatly improved by advanced solid-phase crystallization, offering potential for next-generation electronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Koki Nozawa, Takeshi Nishida, Takamitsu Ishiyama, Takashi Suemasu, Kaoru Toko
Summary: The carrier mobility of polycrystalline Ge thin-film transistors has greatly improved, thanks to advanced solid-phase crystallization and doping with n-type impurities. Among the dopants tested, P doping was found to be the most effective in enhancing the electron concentration and mobility in Ge layers. This improvement in electron mobility opens up possibilities for advanced electronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)
