Article
Chemistry, Physical
Pierre Tomasini
Summary: The silicon chemical vapor deposition process via silane is determined using classical thermodynamics, showing that a linear function of temperature controls silicon growth rates and neatly maps the response of growth rate activation energy, providing clarity to the parameter space. The study demonstrates the portability of the linear function of temperature across reactors and extracts reactor scaling factors, reducing the complex silicon deposition process to its essentials through thermodynamics.
CHEMISTRY OF MATERIALS
(2021)
Article
Crystallography
Pierre Tomasini
Summary: Chemical Vapor Deposition introduces atomic elements into solid materials via a gas phase, with knowledge of the vapor-solid distribution being crucial. Despite being a non-equilibrium process, analysis of the silicon germanium CVD shows the development of a theory on heterogeneous chemical equilibrium. The laws necessary for determining vapor-solid distributions of Si1-xGex and other binary alloys are now fully understood.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Balamurugan Deivendran, Vijay M. Shinde, Harish Kumar, N. Eswara Prasad
Summary: This study presents the 3D modeling and optimization of a commercial hot wall vertical reactor for SiC coating, investigating the impact of various process parameters on hydrodynamic stability. It was found that buoyancy-driven flow can occur inside the reactor at high Reynolds number and Gr/Re-2 ratio. Process optimization using response surface methodology significantly reduced the number of experiments and simulations required for optimizing the CVD process.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Junwei Yang, Huaping Song, Jikang Jian, Wenjun Wang, Xiaolong Chen
Summary: A new type of morphological defects related to substrate micropipe in 4H-SiC thick homoepitaxial layers has been observed, with a proposed model to interpret the formation mechanism. The wider terrace in 4 degrees off-angle substrate, the interaction between step-flow growth and spiral growth, and the thickness of the epilayer were found to mainly determine the morphology of the observed defect.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Junwei Yang, Huaping Song, Jikang Jian, Wenjun Wang, Xiaolong Chen
Summary: We report the discovery of horseshoe-shaped protuberance defects during the growth of thick homoepitaxial films on 4 degrees off caxis 4H-silicon carbide substrates. Through various experimental techniques, we investigated the morphology, polytype, and formation mechanism of these defects. Our findings suggest that these defects protrude from the surrounding area with surface undulations, but do not contain polytype inclusions. The defect tracking experiments reveal that the defects are not directly related to the presence of dislocations.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Yoshiaki Daigo, Akio Ishiguro, Yoshikazu Moriyama, Ichiro Mizushima
Summary: In this study, homo-epitaxial 4H-SiC films were successfully grown by adjusting the Cl/Si ratio and C/Si ratio in the CVD process. It was found that the formation of Si islands can be suppressed by decreasing the C/Si ratio.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Materials Science, Multidisciplinary
T. M. Aper, F. K. Yam, K. G. Saw, Khi Poay Beh, Khaled M. Chahrour
Summary: In this study, indium oxide nanostructured films were synthesized using hydrogen assisted atmospheric pressure chemical vapor deposition technique at different deposition temperatures. The films' surface morphology, crystallinity, and optical properties were characterized, and their photoelectrochemical (PEC) activity was investigated. The sample grown at 950 degrees C exhibited optimal PEC performance, with high photocurrent density, incident photon to current conversion efficiency, and applied bias to photon conversion efficiency. The superior PEC performance of the sample was attributed to the film composition, crystallinity, bandgap reduction, flat band potential, and charge carrier density.
RESULTS IN PHYSICS
(2021)
Article
Crystallography
Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Summary: SiC is an excellent semiconductor material with high thermal conductivity, stable chemical properties, and high critical breakdown field strength. This paper investigates the epitaxial growth of SiC on n-type SiC substrates and analyzes the effects of growth temperature on the surface morphology of SiC epitaxial layers. The results show that higher growth temperature can lead to smoother surface and higher content of 4H-SiC.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Crystallography
C. R. Tait, S. R. Lee, J. Deitz, M. A. Rodriguez, D. L. Alliman, B. P. Gunning, G. M. Peake, A. Sandoval, N. R. Valdez, P. R. Sharps
Summary: Progress has been made in the synthesis of semimetal Cd3As2 by metal-organic chemical-vapor deposition (MOCVD), with optimized growth conditions revealing that InAs-terminated substrates yield the most desirable results. Advanced imaging techniques and x-ray diffraction modalities have been utilized to extensively study the microstructure of Cd3As2 thin films, showing smooth and specular surfaces with low roughness. The films exhibit strain relaxation and belong to the P4(2)/nbc space group, positioning MOCVD-grown Cd3As2 as a Dirac semimetal of interest for topological quantum materials research.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Materials Science, Multidisciplinary
Dalei Meng, Yingmin Wang, Hao Xue, Liying Ying, Zenghua Wang
Summary: As the size of SiC boule increases, the problem of crystal creaking becomes more serious. In this work, the residual stress in SiC boule is calculated through stress simulation using COMSOL and STR-VR software. A direct diagram comparing the stress distribution in the crystal is provided. Relevant indications for growing large size SiC bulk with low stress, as well as fabricating a 6-inch stress-free SiC bulk with improved quality, are given based on our theoretical investigations.
Article
Crystallography
Siqi Zhao, Junhong Chen, Shangyu Yang, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Summary: This paper studied the effect of temperature on the epitaxial layer during epitaxy on 4H-SiC SI substrates. It was found that 3C-SiC was obtained at low temperature, while 4H-SiC was obtained at higher temperature.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Crystallography
H. Suo, K. Eto, H. Osawa, T. Kato, H. Okumura
Summary: In this study, n-type N-B co-doped 4H-SiC crystals were grown by physical vapor transport method. The relationship between the boron concentration and the mixing ratio of boron carbide (B4C) in the SiC source powder was investigated. Furthermore, the relationship between the boron concentration and dislocation increase in the initial stage of growth was analyzed. It was found that an increase of threading dislocation occurred when the boron concentration was higher than 1 x 10(19) cm(-3) in the initial stage of growth. This threading dislocation increase can be suppressed by performing a pre-sublimation process of the mixed SiC and B4C powder.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Physics, Applied
Kensuke Akiyama, Masaru Itakura
Summary: Semiconducting iron disilicide (beta-FeSi2) films were epitaxially grown on Silver (Ag) pre-coated Silicon (Si) substrates with an initial beta-FeSi2 layer using metal-organic chemical vapor deposition. The crystal quality of these beta-FeSi2 films improved with increasing growth temperature, exhibiting (101)-preferred orientations. The photoluminescence intensity of the (101)-oriented beta-FeSi2 films grown at 973 K was higher compared to films grown at other temperatures, indicating a decrease in nonradiative recombination centers. The films showed significant A-band emission from beta-FeSi2 up to 285 K, which was attributed to improved crystallinity and decreased density of thermal equilibrium Si vacancy.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Evgeny A. Ekimov, Vladimir S. Krivobok, Mikhail V. Kondrin, Dmitry A. Litvinov, Ludmila N. Grigoreva, Aleksandra V. Koroleva, Darya A. Zazymkina, Roman A. Khmelnitskii, Denis F. Aminev, Sergey N. Nikolaev
Summary: This study focused on the size-controllable synthesis of high-quality SiC nanocrystals, demonstrating the ability to tune crystal size by adjusting synthesis temperature. Optical properties of the SiC crystals were investigated, providing insights into carrier distribution in nanoparticles.
Article
Chemistry, Multidisciplinary
Anatoly Dvurechenskii, Aleksey Kacyuba, Gennadiy N. Kamaev, Vladimir A. Volodin, Zhanna Smagina
Summary: The radiation-induced phenomena during CaSi2 crystal growth were investigated in the epitaxial CaF2 growth process on Si (111) and after film formation with electron irradiation on Si (111). Both approaches lead to the formation of CaSi2 crystals in the irradiated region of the CaF2 film.
Article
Chemistry, Multidisciplinary
Jianjun Chen, Xin Liao, Mingming Wang, Zhaoxiang Liu, Judong Zhang, Lijuan Ding, Li Gao, Ye Li
Article
Chemistry, Physical
Xin Liao, Jianjun Chen, Mingming Wang, Zhaoxiang Liu, Lijuan Ding, Ye Li
JOURNAL OF ALLOYS AND COMPOUNDS
(2016)
Article
Chemistry, Analytical
Min Jiang, Xin Liao, Lijuan Ding, Jianjun Chen
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
(2017)
Article
Materials Science, Multidisciplinary
Jianjun Chen, Min Jiang, Wenxin Lin, Lijuan Ding, Lipeng Xin
JOURNAL OF MATERIALS SCIENCE
(2018)
Article
Chemistry, Inorganic & Nuclear
Jianjun Chen, Lijuan Ding, Lipeng Xin, Fan Zeng, Jun Chen
JOURNAL OF SOLID STATE CHEMISTRY
(2017)
Article
Chemistry, Physical
Mingming Wang, Jianjun Chen, Xin Liao, Zhaoxiang Liu, Judong Zhang, Li Gao, Ye Li
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2014)
Article
Chemistry, Physical
Jianjun Chen, Judong Zhang, Mingming Wang, Li Gao, Ye Li
JOURNAL OF ALLOYS AND COMPOUNDS
(2014)
Article
Materials Science, Multidisciplinary
Judong Zhang, Jianjun Chen, Lipeng Xin, Mingming Wang
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2014)
Article
Chemistry, Analytical
Jianjun Chen, Judong Zhang, Mingming Wang, Ye Li
SENSORS AND ACTUATORS B-CHEMICAL
(2014)
Article
Materials Science, Ceramics
Kechen Kao, Min Jiang, Lijuan Ding, Wenxin Lin, Jianjun Chen
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2019)
Article
Materials Science, Multidisciplinary
Min Jiang, Guosong Ou, Ruiqi Ma, Kechen Kao, Wenxin Lin, Jianjun Chen
JOURNAL OF MATERIALS SCIENCE
(2019)
Article
Materials Science, Ceramics
Mingming Zhu, Dongxu Liu, Jiahao Yang, Hongchen Hou, Haolin Li, Jianjun Chen
Summary: By coating SiC nanowires with PyC/BN compound coatings and fabricating SiCnw/SiC CMC with PyC/BN interfaces, the mechanical properties of the composites can be improved. The flexural strength and fracture toughness of the CMC reach maximum values under suitable phenolic resin content.
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Xiaohong Li, Zahoor Ahmad, Xiao Zhang, Xiaoyu Luo, Zhihao Bao, Jinxia Li, Jianjun Chen
Summary: In this study, a novel strategy of iodine vapor curing was used to cure the fine-diameter PSZ fibers, and their pyrolysis behaviors at different temperatures were investigated. The results showed that the fine-diameter amorphous SiCN ceramic fibers had a high tensile strength of 1.08 +/- 0.26 GPa after pyrolysis at various temperatures. The pyrolysis process involved the transformation of unstable chemical bonds and active groups into Si3N structure, with the release of iodine, CH4, NH3, and cyclotrisiloxane.
MATERIALS TODAY COMMUNICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Xiaoyu Luo, Xiaohong Li, Zhihao Bao, Xiao Zhang, Haolin Li, Zahoor Ahmad, Jianjun Chen
Summary: Successfully fabricated amorphous polymer-derived SiCN ceramic fibres were achieved using homemade polysilazane (PSZ) through a series of processes including melt-spinning, UV curing, and pyrolyzing. The effects of UV irradiation time on the composition, microstructure, and ceramic yields of PSZ fibres were investigated. UV cross-linking reaction occurred on the surface layer of the PSZ fibres, where UV radiations played a critical role in accelerating the cleavage of Si-H, N-H, and C-H bonds to form cross-linked networks. The reported UV irradiation provides a novel curing method for the fabrication of SiCN ceramic fibres using PSZ fibres.
BULLETIN OF MATERIALS SCIENCE
(2023)
Article
Chemistry, Physical
Min Jiang, Zhaoxiang Liu, Lijuan Ding, Jianjun Chen
CATALYSIS COMMUNICATIONS
(2017)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)