Article
Crystallography
Shu Aikawa, Masaki Yumoto, Tomohiko Saitoh, Satoshi Wada
Summary: The research team developed a tunable mid-IR laser using Cr:ZnSe and Cr:CdSe as laser media to access the mid-infrared region. By using a Q-switched Tm:YAG laser as a pump source, they achieved a wide tuning range and high pulse energy at different wavelengths.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Jiaxin Chen, Munetoshi Seki, Md Shamim Sarker, Hiroyasu Yamahara, Hitoshi Tabata
Summary: The study demonstrates the formation of self-organized nanostructures in CoGa0.8Mn1.2O4 thin films through thermal annealing. Post-annealing in air promotes crystalline phase separation into tetragonal and cubic phases, resulting in the formation of a nano-zigzag pattern. The structural and magnetic properties of the nanostructured films strongly depend on the annealing time due to the inter-diffusion of Ga and Mn ions.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Kazutada Ikenaga, Nami Tanaka, Taro Nishimura, Hirotaka Iino, Ken Goto, Masato Ishikawa, Hideaki Machida, Tomo Ueno, Yoshinao Kumagai
Summary: The effect of high temperature homoepitaxial growth of (010) beta-Ga2O3 layer by low pressure hot-wall metal-organic vapor phase epitaxy was investigated. The growth rate decreased and the growth mode changed as the growth temperature increased. A smooth, twin-free single-crystalline homoepitaxial layer with a structural quality equivalent to that of the substrate could be grown at 1000 degrees C. The grown layers were all n-type and showed an effective donor concentration approximately equal to the Si impurity concentration.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Hidetoshi Nakahata, Rie Togashi, Ken Goto, Bo Monemar, Yoshinao Kumagai
Summary: The study investigated the influence of growth conditions on the halide vapor phase epitaxy of In2O3 on sapphire substrates. It was found that growth temperature and input partial pressure of source gas play a crucial role in determining the growth rate, crystal orientation, and purity of the grown layers. The layers grown at higher temperatures exhibited different preferred orientations and surface characteristics, with the highest growth rate exceeding 10 μm/h at 1000 degrees C.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
M. Albert, C. Golla, C. Meier
Summary: Temperature management of substrates is crucial for molecular beam epitaxy and thin film deposition techniques. This work compares different in-situ methods for measuring substrate temperature and growth rate of wide band semiconductors like ZnO and GaN. By combining in-situ and ex-situ measurements with simulation data, characteristic behaviors of common substrate mounting techniques for Al2O3 and ZnO substrates are demonstrated, along with an investigation into the performance of reflectometry-based growth rate determination during ZnO homoepitaxy.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Rie Togashi, Ryo Kasaba, Ken Goto, Yoshinao Kumagai, Akihiko Kikuchi
Summary: The HEATE method demonstrated high controllability and large-area adaptability for etching c-In2O3 layers, with the etching rate ranging from 1 to 75 nm min(-1) under different temperatures and pressures. The experimental results were in good agreement with thermodynamic analysis, indicating that the etching process follows thermodynamics.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Chemistry, Multidisciplinary
Piero Mazzolini, Zsolt Fogarassy, Antonella Parisini, Francesco Mezzadri, David Diercks, Matteo Bosi, Luca Seravalli, Anna Sacchi, Giulia Spaggiari, Danilo Bersani, Oliver Bierwagen, Benjamin Moritz Janzen, Marcella Naomi Marggraf, Markus R. Wagner, Ildiko Cora, Bela Pecz, Abbes Tahraoui, Alessio Bosio, Carmine Borelli, Stefano Leone, Roberto Fornari
Summary: Unintentionally doped kappa-Ga2O3 epitaxial films on sapphire substrates exhibit columnar rotational domains that inhibit in-plane electronic conduction. The introduction of silane doping increases the domain size and mobility, improving in-plane conduction. Non-destructive techniques based on X-ray diffraction and Raman spectroscopy can be used to compare domain dimensions.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Crystallography
V Donchev, M. Milanova, K. Kirilov, S. Georgiev, K. L. Kostov, G. M. Piana, G. Avdeev
Summary: This paper presents an original study on the growth of metamorphic GaAsSb layers on GaAs substrates by liquid phase epitaxy (LPE) for photovoltaic applications. Various measurement methods were used to investigate the crystal structure, composition, surface morphology, and optical and electrical properties of the grown layers. The results demonstrate the potential of obtaining layers with specific compositions and properties for photovoltaic applications by carefully selecting the technological conditions.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Hongyu Lin, Hao Xie, Yan Sun, Shuhong Hu, Ning Dai
Summary: This paper presents the designing principles of InAs based pBin mid-infrared (MWIR) photodetectors grown by liquid phase epitaxy (LPE) based on the lattice mismatch. pBin MWIR detector structures with InAs, InAs0.94Sb0.06, and InAs0.89Sb0.11 absorbers were designed and grown by LPE, and then fabricated into mesa type detectors. The three kinds of detectors achieved detectivities higher than 1 x 109 cm Hz1/2 W-1, with the InAs absorber achieving a detectivity of 1.6 x 1010 cm Hz1/2 W-1 at 300 K, the highest ever reported, indicating good material qualities of the detectors.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Nanoscience & Nanotechnology
D. T. Yimam, M. Ahmadi, B. J. Kooi
Summary: In this study, the growth of monatomic antimony thin films using pulsed laser deposition on lattice-matching and amorphous substrates was demonstrated. The results showed that the method can produce smooth and high-quality antimony thin films with uniform coverage, which have potential for research in phase change memory and nanophotonics.
MATERIALS TODAY NANO
(2023)
Article
Chemistry, Physical
Rui Ma, Zhimin Yu, Zejun Ye, Yang Yang, Jiaming Sun
Summary: Er-doped GeO2 nanofilms were successfully fabricated on silicon by atomic layer deposition. The nanofilms maintained their amorphous structure after annealing and showed good stability during wet lithography process. The GeO2:Er devices exhibited low threshold voltage, high external quantum efficiency, and power efficiency. This work demonstrates the potential of GeO2:Er nanofilms in Si-based optoelectronics.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
Mansi Agrawal, Anubha Jain, Vishakha Kaushik, Akhilesh Pandey, B. R. Mehta, R. Muralidharan
Summary: In this study, catalyst-free GaN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam epitaxy, followed by the deposition of a few layers of MoS2 by chemical vapor deposition. The morphology and vibrational properties of the MoS2/GaN nanowires on Si (111) substrates were analyzed using scanning electron microscopy and Raman spectroscopy. The results indicate the potential of MoS2/GaN nanowires heterojunction for future optoelectronic devices due to their exceptional structural and vibrational properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Wenwu Pan, Junliang Liu, Zekai Zhang, Renjie Gu, Alexandra Suvorova, Sarah Gain, Han Wang, Ziyuan Li, Lan Fu, Lorenzo Faraone, Wen Lei
Summary: The study focuses on van der Waals epitaxy of CdSe thin films on mica substrates and the development of etch-free layer transfer technology for flexible photodetectors. The CdSe thin films demonstrate excellent device performance, making them suitable for full-color imaging.
Article
Crystallography
Zhifei Zhao, Yun Li, Yi Wang, Ping Zhou, Zhonghui Li, Ping Han
Summary: 4H-SiC trenches were filled by chemical vapor deposition (CVD) using a gas system consisting of trichlorosilane, (TCS:C2H4:H2). The effects of Cl/Si ratio and growth pressure on the coverage distribution across trenches and the filling efficiency were investigated. Using the optimized process at Cl/Si = 43.5, 8 μm deep 4H-SiC trenches with an aspect ratio of 3 were completely filled at a filling rate of 2.8 μm/h and obtained a flat end surface without void defects.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Chemistry, Physical
Haoxiu Chen, Zhiying Liu, Xu Cheng, Yu Zou
Summary: This study explores the microstructure and mechanical properties of a gradient metallic alloy fabricated using laser metal deposition (LMD) from Ti2AlNb to gamma-TiAl. The results reveal a transition zone with three layers and gradient compositions, showing correlations between the mechanical properties and microstructure. By combining microstructure and phase analysis with high-speed nanoindentation, this work provides insight into the study of graded materials made using LMD.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Physics, Applied
Wei-Chun Chen, Shou-Yi Kuo, Jr. -Sheng Tian, Wei-Lin Wang, Fang-I Lai, Yue-Han Wu, Li Chang
JAPANESE JOURNAL OF APPLIED PHYSICS
(2017)
Article
Physics, Applied
Shane Chang, Lin Lung Wei, Tien Tung Luong, Ching Chang, Li Chang
JOURNAL OF APPLIED PHYSICS
(2017)
Article
Materials Science, Multidisciplinary
Lin-Lung Wei, Li Chang
Article
Physics, Applied
Yi-Chun Chen, Li Chang
JAPANESE JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Zhih-Cheng Ma, Kun-An Chiu, Lin-Lung Wei, Li Chang
JAPANESE JOURNAL OF APPLIED PHYSICS
(2019)
Article
Chemistry, Physical
Thi Hien Do, Ching Chang, Lin-Lung Wei, Kun-An Chiu, Li Chang
APPLIED SURFACE SCIENCE
(2020)
Article
Chemistry, Multidisciplinary
Yi-Hsin Ting, Chun-Wei Huang, Akira Yasuhara, Sheng-Yuan Chen, Jui-Yuan Chen, Li Chang, Kuo-Chang Lu, Wen-Wei Wu
Article
Materials Science, Coatings & Films
Yu-Siang Fang, Kun-An Chiu, Hien Do, Li Chang
SURFACE & COATINGS TECHNOLOGY
(2019)
Article
Materials Science, Multidisciplinary
Shane Chang, Ming Zhao, Valentina Spampinato, Alexis Franquet, Thi-Hien Do, Akira Uedono, Tien Tung Luong, Tsang-Hsuan Wang, Li Chang
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
Shane Chang, Ming Zhao, Valentina Spampinato, Alexis Franquet, Li Chang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2020)
Article
Materials Science, Coatings & Films
Chang-Hua Yu, Kun-An Chiu, Thi-Hien Do, Li Chang
SURFACE & COATINGS TECHNOLOGY
(2020)
Article
Materials Science, Coatings & Films
Kun-An Chiu, Chia-Wei Fu, Yu-Siang Fang, Thi Hien Do, Fu-Han Shih, Li Chang
SURFACE & COATINGS TECHNOLOGY
(2020)
Article
Materials Science, Multidisciplinary
Yu-Siang Fang, Thi Hien Do, Kun-An Chiu, Wei-Chun Chen, Li Chang
Article
Nanoscience & Nanotechnology
Yu-An Shen, Li Chang, Shou-Yi Chang, Y-C Chou, K. N. Tu, Chih Chen
Summary: This study investigates the effect of nanotwin (NT) orientation on the stress relaxation behavior of Cu nanopillars. Different orientations of Cu nanopillars were examined and compared using a picoindenter and in situ TEM. The results show that NT orientation significantly influences the stress relaxation behavior, with different orientations leading to different stress drops. The findings suggest that the interaction between NT and dislocations plays a crucial role in the stress relaxation of Cu nanopillars.
Article
Materials Science, Coatings & Films
Hsueh- Chen, Kun-An Chiu, Jing-Feng Lin, Kuan-Yu Lin, Wei-Chia Chen, Ping-Hsun Wu, Cheng-Jung Ko, Li Chang, Chun-Hua Chen
Summary: Epitaxial TiN film has been successfully grown on a semi-insulating single crystal SiC substrate. The effects of growth temperature and nitrogen flow ratio on film quality and growth rate were investigated, revealing that increasing the nitrogen flow ratio improves film quality but decreases growth rate.
SURFACE & COATINGS TECHNOLOGY
(2022)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)