Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

(2013) Lars Knoll et al.   IEEE ELECTRON DEVICE LETTERS

Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs—Part II: Comparative Analysis and Trap-Induced Variability

(2013) David Esseni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs

(2013) Marco G. Pala et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor

(2013) Pei Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Tunneling Transistors Based on Graphene and 2-D Crystals

(2013) Debdeep Jena   PROCEEDINGS OF THE IEEE

Resonant tunnelling and negative differential conductance in graphene transistors

(2013) L. Britnell et al.   Nature Communications

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

(2012) Yeqing Lu et al.   IEEE ELECTRON DEVICE LETTERS

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

(2012) Guangle Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

(2012) F. Conzatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-particle tunneling in doped graphene-insulator-graphene junctions

(2012) R. M. Feenstra et al.   JOURNAL OF APPLIED PHYSICS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Emergence of superlattice Dirac points in graphene on hexagonal boron nitride

(2012) Matthew Yankowitz et al.   Nature Physics

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors

(2011) M. Abul Khayer et al.   JOURNAL OF APPLIED PHYSICS

Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy

(2011) Régis Decker et al.   NANO LETTERS

Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

(2011) Jiamin Xue et al.   NATURE MATERIALS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Correlated Charged Impurity Scattering in Graphene

(2011) Jun Yan et al.   PHYSICAL REVIEW LETTERS

Theory of 2D Transport in Graphene for Correlated Disorder

(2011) Qiuzi Li et al.   PHYSICAL REVIEW LETTERS

Urbach tail studies by luminescence filtering in moderately doped bulk InP

(2010) Arsen V. Subashiev et al.   APPLIED PHYSICS LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits

(2010) Ronald G. Dreslinski et al.   PROCEEDINGS OF THE IEEE

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE