Investigating interface states and oxide traps in the MoS2/oxide/Si system

标题
Investigating interface states and oxide traps in the MoS2/oxide/Si system
作者
关键词
2D materials, Interface states, Oxide traps, MoS, 2, /oxide/Si system, MOSFET, Tunnel FET
出版物
SOLID-STATE ELECTRONICS
Volume 186, Issue -, Pages 108123
出版商
Elsevier BV
发表日期
2021-06-09
DOI
10.1016/j.sse.2021.108123

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