Raman tensor elements and Faust-Henry coefficients of wurtzite-type α-GaN: How to overcome the dilemma of the sign of Faust-Henry coefficients in α-GaN?

Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

(2013) M. Barchuk et al.   JOURNAL OF CRYSTAL GROWTH

Raman spectroscopic characterization of epitaxially grown GaN on sapphire

(2013) Christian Röder et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

The effect of n- and p-type doping on coherent phonons in GaN

(2013) Kunie Ishioka et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Phonon polaritons in uniaxial crystals: A Raman scattering study of polaritons inα-GaN

(2013) Gert Irmer et al.   PHYSICAL REVIEW B

Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates

(2012) Bei Ma et al.   APPLIED PHYSICS LETTERS

Phonon plasmon interaction in ternary group-III-nitrides

(2012) Ronny Kirste et al.   APPLIED PHYSICS LETTERS

Raman tensor elements for wurtzitic GaN and their application to assess crystallographic orientation at film/substrate interfaces

(2011) Giuseppe Pezzotti et al.   JOURNAL OF APPLIED PHYSICS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires

(2009) K. Jeganathan et al.   JOURNAL OF APPLIED PHYSICS