标题
Controlling the surface roughness of epitaxial SiC on silicon
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 20, Pages 203501
出版商
AIP Publishing
发表日期
2014-05-24
DOI
10.1063/1.4879237
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon
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