Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices
出版年份 2013 全文链接
标题
Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 18, Pages 184501
出版商
AIP Publishing
发表日期
2013-05-09
DOI
10.1063/1.4803688
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
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- High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes
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- Avalanche breakdown in microscale VO2 structures
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- Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K
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- Analysis of “on” and “off” times for thermally driven VO2 metal-insulator transition nanoscale switching devices
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- Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications
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- Electrical oscillations induced by the metal-insulator transition in VO2
- (2010) Hyun-Tak Kim et al. JOURNAL OF APPLIED PHYSICS
- Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis
- (2010) Aurelian Crunteanu et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- $\hbox{VO}_{2}$ Thin-Film Varistor Based on Metal-Insulator Transition
- (2009) Bong-Jun Kim et al. IEEE ELECTRON DEVICE LETTERS
- Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film
- (2008) Yong Wook Lee et al. APPLIED PHYSICS LETTERS
- Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry
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