High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Role of interlayer coupling in ultra thin MoS2

(2012) Yingchun Cheng et al.   RSC Advances

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Doping dependence of thermoelectric performance in Mo3Sb7: First-principles calculations

(2011) David Parker et al.   PHYSICAL REVIEW B

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Analysis of the thermoelectric properties ofn-type ZnO

(2011) Khuong P. Ong et al.   PHYSICAL REVIEW B

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Thermal and Electronic Properties of Exfoliated Metal Chalcogenides

(2010) Jong-Young Kim et al.   BULLETIN OF THE KOREAN CHEMICAL SOCIETY

Unusual Transport and Strongly Anisotropic Thermopower inPtCoO2andPdCoO2

(2010) Khuong P. Ong et al.   PHYSICAL REVIEW LETTERS

Electronic structure and thermoelectric properties of layeredPbSe-WSe2materials

(2009) Lijun Zhang et al.   PHYSICAL REVIEW B

High-pressure X-ray diffraction study of tungsten diselenide

(2008) Emre Selvi et al.   JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

X-ray diffraction study of molybdenum diselenide to 35.9GPa

(2008) Resul Aksoy et al.   JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS