Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate

Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer

(2010) S. P. Chang et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

(2010) Y. B. Tao et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop behavior of direct current aged GaN-based blue light-emitting diodes

(2009) Xianjie Shao et al.   APPLIED PHYSICS LETTERS

Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

(2009) Jiang-Yong Zhang et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

(2008) Jianzheng Hu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu

(2008) Yongjian Sun et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY