Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films

Correlating structural and resistive changes in Ti:NiO resistive memory elements

(2010) O. Heinonen et al.   APPLIED PHYSICS LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

(2010) In Kyeong Yoo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Resistance Switching in Electrodeposited Magnetite Superlattices

(2010) Jay A. Switzer et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes

(2009) J. S. Choi et al.   APPLIED PHYSICS LETTERS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS

Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer

(2009) Debashis Panda et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Memory Characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barriers

(2008) D. Panda et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

The fourth element

(2008) James M. Tour et al.   NATURE

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology