期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3055340
关键词
decomposition; grain growth; hafnium compounds; high-k dielectric thin films; interface states; leakage currents; nucleation; refractive index
The HfO2 films were prepared using alkoxy-derived precursor solutions. The effects of the chemical composition of precursor solutions on the microstructure development and electrical properties were investigated. The flatness and refractive index of the HfO2 films were improved by using diethanolamine-added solution. This result is considered to be due to the difference in the progress of organic decomposition and the behavior of nucleation and grain growth. The difference in the chemical composition affected the electrical properties such as leakage current and capacitance-voltage characteristics, which are related to the defects in the film and interface state.
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