Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates

标题
Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 4, Pages 044909
出版商
AIP Publishing
发表日期
2009-08-27
DOI
10.1063/1.3204026

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