Tuning the electronic properties of transition-metal trichalcogenides via tensile strain

TiS3Transistors with Tailored Morphology and Electrical Properties

(2015) Joshua O. Island et al.   ADVANCED MATERIALS

Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility

(2015) Jun Dai et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Few-layered titanium trisulfide (TiS3) field-effect transistors

(2015) Alexey Lipatov et al.   Nanoscale

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

(2015) Kibum Kang et al.   NATURE

Single layer of MX3 (M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics

(2015) Yingdi Jin et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Tuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain

(2014) Hongyan Guo et al.   Journal of Physical Chemistry C

Strain engineering of selective chemical adsorption on monolayer MoS2

(2014) Liangzhi Kou et al.   Nanoscale

Ultrahigh Photoresponse of Few-Layer TiS3Nanoribbon Transistors

(2014) Joshua O. Island et al.   Advanced Optical Materials

Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet

(2013) Yeung Yu Hui et al.   ACS Nano

Nanoscale Multilayer Transition-Metal Dichalcogenide Heterostructures: Band Gap Modulation by Interfacial Strain and Spontaneous Polarization

(2013) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

(2013) Keliang He et al.   NANO LETTERS

Local Strain Engineering in Atomically Thin MoS2

(2013) Andres Castellanos-Gomez et al.   NANO LETTERS

MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

(2013) Ning Lu et al.   Nanoscale

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2

(2013) C. R. Zhu et al.   PHYSICAL REVIEW B

Liquid Exfoliation of Layered Materials

(2013) V. Nicolosi et al.   SCIENCE

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2

(2012) Yungang Zhou et al.   ACS Nano

Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties

(2012) Yandong Ma et al.   ACS Nano

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes

(2012) Peng Lu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Mechanical and electronic properties of monolayer MoS2 under elastic strain

(2012) Qu Yue et al.   PHYSICS LETTERS A

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Large-Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions

(2011) Ronan J. Smith et al.   ADVANCED MATERIALS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Splitting in the Fermi surface ofZrTe3: A surface charge density wave system

(2009) Moritz Hoesch et al.   PHYSICAL REVIEW B

MoS2Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties

(2008) Yafei Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY