Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film
出版年份 2014 全文链接
标题
Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film
作者
关键词
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出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 4S, Pages 04ED11
出版商
IOP Publishing
发表日期
2014-03-15
DOI
10.7567/jjap.53.04ed11
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