Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory

标题
Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 9, Pages 094504
出版商
AIP Publishing
发表日期
2009-11-06
DOI
10.1063/1.3253758

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