Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices

标题
Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 5S3, Pages 05FF01
出版商
IOP Publishing
发表日期
2013-05-20
DOI
10.7567/jjap.52.05ff01

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search