Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations

(2011) Ranga Hettiarachchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

(2011) Yeonghun Lee et al.   JOURNAL OF APPLIED PHYSICS

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

(2011) Soshi Sato et al.   MICROELECTRONICS RELIABILITY

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

(2010) Yusuke Kobayashi et al.   MICROELECTRONICS RELIABILITY

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

(2010) Heung-Jae Cho et al.   SOLID-STATE ELECTRONICS

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the Subthreshold Region

(2009) Chengqing Wei et al.   IEEE ELECTRON DEVICE LETTERS

Low-Frequency Noise Characteristics in Ion-Implanted GaN-Based HEMTs

(2008) Masahiro Nakajima et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

(2008) Jing Zhuge et al.   IEEE ELECTRON DEVICE LETTERS