Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

(2010) Michael Moseley et al.   APPLIED PHYSICS LETTERS

Power dissipation and mode transition in an RF discharge with multi-hollow cathode electrode

(2010) Yun-Seong Lee et al.   THIN SOLID FILMS

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy

(2009) Tomohiro Yamaguchi et al.   Applied Physics Express

Transient atomic behavior and surface kinetics of GaN

(2009) Michael Moseley et al.   JOURNAL OF APPLIED PHYSICS

New MBE growth method for high quality InN and related alloys usingin situmonitoring technology

(2009) Tomohiro Yamaguchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

(2008) Gon Namkoong et al.   APPLIED PHYSICS LETTERS

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

(2008) Shawn D. Burnham et al.   JOURNAL OF APPLIED PHYSICS