Article
Chemistry, Physical
Ming Hu, Zhaowang Li, Xiaoming Gao, Dong Jiang, Zhilu Liu, Longbang Guo, Xu Zhao, Jun He, Jiayi Sun, Lijun Weng, Desheng Wang
Summary: This study fabricated pure Ta films using magnetron sputtering and investigated the effects of base pressure and substrate temperature on the oxidation state of the films. The results can provide references for controlling the oxidation states of Ta.
Article
Chemistry, Physical
D. A. Granada-Ramirez, A. Pulzara-Mora, C. A. Pulzara-Mora, A. Pardo-Sierra, A. Cardona-Bedoya, M. Perez-Gonzalez, S. A. Tomas, S. Gallardo-Hernandez, J. G. Mendoza-Alvarez
Summary: InGaN thin films were deposited on silicon substrates using RF magnetron sputtering, and the In content was controlled by adjusting the substrate temperature. The optical and structural properties of the films were analyzed, and it was found that the band gap energy increased with temperature.
APPLIED SURFACE SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Dmitrii Sidelev, Vladislav A. Grudinin, Konstantin A. Zinkovskii, Kamila Alkenova, Galina A. Bleykher
Summary: This article presents a comparative analysis of chromium coatings deposited by magnetron sputtering with and without ion assistance induced by a RF-ICP source. The results show that RF-ICP assistance significantly enhances ion current density and improves corrosion resistance of the coatings.
Article
Materials Science, Coatings & Films
R. Hippler, M. Cada, P. Ksirova, J. Olejnicek, P. Jiricek, J. Houdkova, H. Wulff, A. Kruth, C. A. Helm, Z. Hubicka
Summary: Cobalt oxide films were deposited using two different magnetron sputtering techniques under different oxygen atmospheres, demonstrating that films produced by HiPIMS process have better performance and lower resistivity. The deposition conditions of magnetron sputtering have a significant impact on the crystal structure and electrical properties of the deposited films.
SURFACE & COATINGS TECHNOLOGY
(2021)
Article
Chemistry, Physical
Baktiyar Soltabayev, Ahmad Ajjaq, Gani Yergaliuly, Yerkebulan Kadyrov, Amanzhol Turlybekuly, Selim Acar, Almagul Mentbayeva
Summary: This study aims to explore the advantages of titanium doping and magnetron sputtering over chemical-based methods on the surficial and electrical characteristics of ZnO films, specifically on their gas sensing performance. Pure ZnO nanofilm and Ti-doped ZnO nanofilms with different Ti contents were synthesized using RF magnetron sputtering. The nanofilms exhibited a pure hexagonal wurtzite structure, with relatively flat and homogenous surfaces and a clear distribution of nanoparticles in the Ti-doped samples. The enhanced properties of the nanofilms were reflected in the gas sensor's ultimate performance, with the 1 wt% Ti content sensor showing the best gas sensing performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Physical
Fang- Lai, Jui-Fu Yang, Yu-Chao Hsu, Shou-Yi Kuo
Summary: In this study, AZO thin films were deposited using a radio-frequency magnetron sputter system at room temperature, and it was found that the properties of the films strongly depend on the target racetrack. Films grown outside the racetrack exhibited the most suitable performance and the least residual stress, making them ideal for transparent conductive applications. When applied to CZTSe solar cells, the photoelectric efficiency was measured at 3.56%.
Article
Physics, Multidisciplinary
Devendra Kumar, Chiranji Lal, Dharm Veer, Deshraj Singh, Pawan Kumar, Ram S. Katiyar
Summary: CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.
Article
Materials Science, Multidisciplinary
Giji Skaria, Avra Kundu, Kalpathy B. Sundaram
Summary: Copper indium oxide (CuInOx) thin films were deposited using RF magnetron sputtering technique at various substrate temperatures up to 400 degrees C, achieving a p-type thin film with increased conductivity and high transparency. XPS studies confirmed the controlled migration of indium oxide phases during sputtering, leading to superior conductivity and transparency with increasing substrate temperatures. The fabricated p-CuInOx/n-Si heterojunction had a knee voltage of 0.85 V, and initial solar cell parameters were reported after investigating the photovoltaic behavior of the device.
Article
Materials Science, Multidisciplinary
Li Kai, Miao Xiaojun, Qian Dan, Yulou Li, Meng Yu, Pang Yajuan, Yang Bo, Li Yanhuai, Hao Liucheng, Fan Yanyan, Song Zhongxiao
Summary: Copper-chromium (CuCr) alloys are commonly used as electrical contact materials, and adding Mo can improve their arc erosion resistance. Supersaturation solid solutions of CuCr and CuCrMo films were prepared via magnetron sputtering in this study, showing that Mo addition reduces diffusion rate during annealing. CuCrMo films exhibit larger erosion area and lower erosion pit depth compared to CuCr films, and arc erosion experiment confirms satisfactory resistance in CuCrMo films.
MATERIALS RESEARCH EXPRESS
(2021)
Article
Engineering, Electrical & Electronic
Yuyan Zhou, Yu Song, Ruohao Hong, Xingqiang Liu, Xuming Zou, Benjamin Iniguez, Denis Flandre, Guoli Li, Lei Liao
Summary: In this study, the electrical evolution of p-type SnOx film and transistor is investigated by altering oxygen partial pressure and sputtering power in the radio frequency magnetron sputtering process. The optimal oxygen partial pressure range is found to be 4.8%-7.2% for SnOx film deposition at sputtering powers of 70 and 30 W. X-ray photoelectron spectroscopy analysis reveals that SnOx films deposited at high power show less sensitivity to oxygen partial pressure and have a relatively large process window. The defect states inside the SnOx are also analyzed.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Multidisciplinary
Rahul Godiwal, Amit Kumar Gangwar, Jyoti Jaiswal, Pargam Vashishtha, Modassar Hossain, Prabir Pal, Govind Gupta, Preetam Singh
Summary: This study compares the effects of balanced and unbalanced magnetron configurations on room temperature sputtered ZnO thin films, finding that the unbalanced magnetron configuration significantly improves the crystalline quality, band gap, and surface properties of the films.
Article
Materials Science, Multidisciplinary
Pattarapon Pooyodying, Jung-Woo Ok, Young-ho Son, Youl-Moon Sung
Summary: This study investigated the electrical and optical properties of an electrochromic device with molybdenum-doped tungsten trioxide electrode. The results showed that the WO3:Mo film prepared under specific RF power conditions exhibited the highest coloration efficiency and sensitivity among the tested samples.
Article
Engineering, Electrical & Electronic
Farbod Amirghasemi, Sam Kassegne
Summary: This study investigated the surface topography, crystalline structure, and electrical properties of sputtered thin films of antimony telluride and bismuth telluride on silicon and polymer substrates. The results show that increasing the RF sputtering power significantly improved the crystallinity, conductivity, and Seebeck coefficient of the thin films. The study provides insights into the effects of sputtering power and substrate on the material properties of thermoelectric materials.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Physics, Applied
K. Diana Dayas, Akash Singh, Subhashree Sathapathy, K. K. Maurya, P. K. Siwach, V. K. Malik, S. S. Kushvaha, H. K. Singh
Summary: The magnetic and magnetotransport properties of a PrNiO3 thin film deposited on a LAO substrate are investigated. The film shows an enlargement in the out-of-plane lattice constant, indicating larger in-plane compressive strain and the presence of defects. The film undergoes a transition from paramagnetic to antiferromagnetic state at around 150K. It also exhibits a weak semiconducting behavior at high temperatures and a negative magnetoresistance, which is attributed to the destabilization of the antiferromagnetic state.
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM
(2023)
Article
Materials Science, Coatings & Films
Ngetich Gilbert Kipkirui, Tzu-Tang Lin, Rotich Sammy Kiplangat, Jyh-Wei Lee, Shih-Hsun Chen
Summary: High entropy alloy (HEA) thin-film coatings have excellent physical, mechanical, and electrochemical properties, making them popular in surface engineering applications. The deposition process, particularly the energy of the impacting species, plays a crucial role in the density and microstructure of the coatings. RF magnetron sputtering and HiPIMS techniques were used in this study to deposit Al0.5CoCrFeNi2Ti0.5 HEA thin-film coatings, resulting in improved surface morphology and corrosion resistance. The study demonstrates that these techniques offer better control over the properties of the thin-film coatings, enhancing their potential use in extreme environments.
SURFACE & COATINGS TECHNOLOGY
(2022)
Review
Chemistry, Multidisciplinary
Xuan Zhao, Qi Li, Liangxu Xu, Zheng Zhang, Zhuo Kang, Qingliang Liao, Yue Zhang
Summary: 1D-ZnO plays a crucial role in photoelectrical devices construction due to its easily modulated morphology and band structure. By forming heterostructures with other materials, the functional diversity of 1D-ZnO is greatly enriched. Interface engineering can adjust the behavior of carriers in 1D-ZnO-based heterostructures to optimize its photoelectrical performance.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Yong Xie, Yu Sun, Huibing Tao, Xin Wang, Jing Wu, Kaikai Ma, Li Wang, Zhuo Kang, Yue Zhang
Summary: Efforts have been focused on high-performance electrocatalysts for water splitting to address the issue of fossil fuel scarcity. With the development of in situ techniques, understanding the dynamic service behaviors of electrocatalysts has become crucial for establishing lifetime structure-performance correlations. Critical challenges and prospects are discussed for establishing these correlations.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Xin Wang, Yuwei Zhang, Jing Wu, Zheng Zhang, Qingliang Liao, Zhuo Kang, Yue Zhang
Summary: Single-atom catalysis is a pivotal milestone in heterogeneous catalysis, with superior performance and atomic utilization. Recent developments have expanded the single-atom family through different motifs and substrates. This review aims to summarize and discuss the development and applications of 2D TMD-based single-atom catalysis, highlighting the importance of in situ characterization techniques.
Review
Chemistry, Multidisciplinary
Xin Wang, Jing Wu, Yuwei Zhang, Yu Sun, Kaikai Ma, Yong Xie, Wenhao Zheng, Zhen Tian, Zhuo Kang, Yue Zhang
Summary: Vacancy defect engineering has been widely used to shape the physicochemical properties of diverse catalysts. This review provides a comprehensive understanding of vacancy engineering in 2D TMDs-based electrocatalysis, covering its background, manufacturing, characterization, and application in the hydrogen evolution reaction. The review also explores the correlations between specific vacancy regulation routes and catalytic performance improvement, and discusses the future prospects of vacancy engineering in advanced defect catalysts.
ADVANCED MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Xiankun Zhang, Yanzhe Zhang, Huihui Yu, Hang Zhao, Zhihong Cao, Zheng Zhang, Yue Zhang
Summary: As silicon-based electronic devices face challenges of material performance decrease and interface quality degradation, ultrathin 2D materials are considered as potential candidates in future electronics due to their atomically flat surfaces and excellent immunity to short-channel effects. By freely stacking and forming high-quality heterostructure interfaces, all-2D electronics based on 2D van der Waals (vdW) interfaces can exhibit more comprehensive functionality and better performance. However, improving the compatibility of 2D material devices with silicon-based industrial technology remains a critical challenge.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Chenzhe Xu, Suicai Zhang, Wenqiang Fan, Feiyu Cheng, Haochun Sun, Zhuo Kang, Yue Zhang
Summary: By modifying the interface molecules for CsPbI3 perovskite, the electron transfer barrier is reduced and the crystal quality is improved, resulting in a decrease of trap-assisted charge recombination and interfacial energetic loss. As a result, the devices achieve an impressive efficiency of 20.98% and a record-low V-OC deficit of 0.451 V.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Jiayi Sun, Xuan Zhao, Haonan Si, Fangfang Gao, Bin Zhao, Tian Ouyang, Qi Li, Qingliang Liao, Yue Zhang
Summary: In this study, CsPbBr2I quantum dots (CQDs) with surface modulation were used to fabricate high-detectivity and stable photodetectors. The surface modulation not only passivates defects and inhibits vacancies, but also enhances hole transport capacity by modulating energy level mismatch. The assembled CsPbBr2I photodetectors demonstrated a responsivity of 0.375 A W-1, a detectivity of 1.12 x 10(13) Jones, and an on/off ratio of 10(4). Furthermore, the CsPbBr2I photodetectors exhibited excellent long-term stability for 12 weeks and could withstand 1000 bending cycles. This work provides a guideline for the development of perovskite in wireless optical communication.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Tian Ouyang, Xuan Zhao, Xiaochen Xun, Fangfang Gao, Bin Zhao, Shuxin Bi, Qi Li, Qingliang Liao, Yue Zhang
Summary: Self-powered photodetectors are crucial in UV communication, but suboptimal charge utilization hinders their performance. This study presents a self-powered photodetector designed to improve charge utilization using photothermal effect and enhanced conductivity. The device exhibits high responsivity and fast response time, and has been successfully applied in a UV communication system.
Article
Nanoscience & Nanotechnology
Li Gao, Xiankun Zhang, Huihui Yu, Mengyu Hong, Xiaofu Wei, Zhangyi Chen, Qinghua Zhang, Qingliang Liao, Zheng Zhang, Yue Zhang
Summary: Two-dimensional (2D) MoS2 is a promising channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS2 is compromised by vacancy defects, particularly sulfur vacancies (V-S). Understanding the impact of these defects on transistor reliability has been challenging. In this study, we establish a simulated initiator to track the evolution of vacancy defects in MoS2 and their influence on transistor reliability.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Jiankun Xiao, Kuanglei Chen, Xiankun Zhang, Xiaozhi Liu, Huihui Yu, Li Gao, Mengyu Hong, Lin Gu, Zheng Zhang, Yue Zhang
Summary: Researchers have achieved ohmic contact between metal and monolayer MoS2 by introducing a large number of sulfur vacancies, which significantly reduces contact resistance and enables high-performance MoS2 FETs. The dominant factor driving enhanced electrical performance is the increased electron doping caused by sulfur vacancies. This study provides a simple method to promote the development of atomically thin integrated circuits.
Article
Materials Science, Multidisciplinary
Mengyu Hong, Xiankun Zhang, Yu Geng, Yunan Wang, Xiaofu Wei, Li Gao, Huihui Yu, Zhihong Cao, Zheng Zhang, Yue Zhang
Summary: Metal-semiconductor contacts play a crucial role in semiconductor devices. Researchers propose a nanobelt-assisted transfer strategy that enables the universal transfer of over 20 different types of electrodes. The contacts prepared using this strategy exhibit low Schottky barriers and adhere to the Schottky-Mott rule.
Article
Nanoscience & Nanotechnology
Lihua Wang, Xiaoyu He, Xiankun Zhang, Xiaofu Wei, Kuanglei Chen, Li Gao, Huihui Yu, Mengyu Hong, Zheng Zhang, Yue Zhang
Summary: This study reports an ultrahigh-rectification-ratio WSe2 homojunction diode achieved by semi-floating gate doping. The use of direct charge trapping mode and oxygen plasma treatment enhances the interface properties, charge transfer efficiency, and rectification performance.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Liangxu Xu, Xuan Zhao, Xiaochen Xun, Fangfang Gao, Lusen Gao, Shuxin Bi, Liubing Fan, Shuchang Zhao, Qingliang Liao, Yue Zhang
Summary: In this study, an omnidirectionally strain-unperturbed tactile array was prepared by manipulating the fiber orientations in quasi-homogeneous elastomer meshes. The tactile array exhibited high strain insensitivity and robustness even after severe mechanical deformation. By integrating the tactile array with a microcontroller, an accurate tactile interaction system was achieved under multiaxial tensile strain.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Review
Chemistry, Physical
Mohammed Ismail Beddiar, Xiankun Zhang, Baishan Liu, Zheng Zhang, Yue Zhang
Summary: This article reviews the progress in transforming bipolar 2D materials into unipolar p-type/n-type semiconductors, focusing on the factors influencing carrier behavior and the application of these conversion strategies in device performance tuning and new structure device construction.
Article
Materials Science, Multidisciplinary
Bin Zhao, Xuan Zhao, Qi Li, Xiaochen Xun, Tian Ouyang, Zheng Zhang, Zhuo Kang, Qingliang Liao, Yue Zhang
Summary: In this study, a reproducible and low-power multistate bio-memristor was developed by designing a chitosan-reduced graphene oxide interpenetrating network electrolyte. The bio-memristor showed stable resistive switching, reproducible multistate storage, and low power consumption.
