Review
Chemistry, Multidisciplinary
Hui-Lei Hou, Cosimo Anichini, Paolo Samori, Alejandro Criado, Maurizio Prato
Summary: In the past 15 years, 2D materials have revolutionized materials science and become powerful components for high-performance chemical sensors. By forming van der Waals heterostructures (VDWHs), the individual drawbacks of 2D materials can be overcome, leading to superior sensitivities, selectivity, and stability. This review discusses the latest developments in chemical sensors based on VDWHs of 2D materials, including sensing mechanisms and future directions with potential impact in environmental sciences and biomedical applications.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Xiangdong Guo, Wei Lyu, Tinghan Chen, Yang Luo, Chenchen Wu, Bei Yang, Zhipei Sun, F. Javier Garcia de Abajo, Xiaoxia Yang, Qing Dai
Summary: 2D monolayers can be vertically stacked in van der Waals heterostructures to support a wide range of confined polaritons. This offers advantages in terms of controlling the constituent layers, stacking sequence, and twist angles. These heterostructures have extended the performance and functions of polaritons, and potential applications include nanophotonic integrated circuits.
ADVANCED MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Leihao Feng, Xi Zhang, Quan Zheng, Ya Nie, Gang Xiang
Summary: The structural and electronic properties of a two-dimensional SiAs2/GeAs2 van der Waals heterostructure and its applications have been investigated by first-principles calculations and Silvaco Atlas simulations. The stable heterostructure exhibits an indirect bandgap of 0.99 eV in type II band alignment, making it suitable for light detection and energy harvesting. By applying an appropriate electric field, it can exhibit a direct bandgap up to 0.66 eV. The results show that the band alignment of the heterostructure can be tuned between type II and type I for various applications.
Article
Nanoscience & Nanotechnology
Yuchuan Pan, Xiaochi Liu, Junqiang Yang, Won Jong Yoo, Jian Sun
Summary: Two-dimensional transition-metal dichalcogenide (TMDC) based semiconducting van der Waals (vdW) heterostructures have unique and tunable properties, and controlling carrier type and band alignment is crucial for desired performances. In this study, carrier type and band alignment in a vertical MoTe2/MoS2 heterojunction are controlled via thickness engineering and surface charge transfer doping, leading to the realization of multifunctional diodes that are universal and applicable to emerging nanoelectronics based on 2D materials.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Kenan Zhang, Changchun Ding, Baojun Pan, Zhen Wu, Austin Marga, Lijie Zhang, Hao Zeng, Shaoming Huang
Summary: This study investigates the growth mechanisms of 2D van der Waals heterostructures using a custom-built system and identifies a new growth mode with different rate and morphology. A model is proposed to explain the differences in morphologies and growth rates of the two modes. The findings from a range of material combinations may benefit the synthesis of other 2D heterostructures with controlled properties for future device applications.
ADVANCED MATERIALS
(2021)
Review
Materials Science, Multidisciplinary
Lixin Liu, Tianyou Zhai
Summary: The article reviews the latest research activities on wafer-scale vdWHs and their applications, outlining preparation strategies and applications to showcase their potential in electronic, optoelectronic, and flexible devices fields.
Article
Nanoscience & Nanotechnology
Mingjun Yang, Haibo Shu, Yanyan Li, Dan Cao, Xiaoshuang Chen
Summary: A nonvolatile doping strategy is reported for obtaining self-defined p-n junctions in 2D vdW heterostructures created by assembling monolayer transition metal dichalcogenides on polar semiconductors. The results show that the quantum-confined Stark effect plays an important role in spatial distribution, allowing manipulation of carrier types through polarization modulation. This work demonstrates the realization of nonvolatile p-n junctions with high carrier concentration in TMD/PS heterostructures and provides a band-engineering approach for versatile 2D electronics and optoelectronics development.
ADVANCED ELECTRONIC MATERIALS
(2022)
Review
Computer Science, Information Systems
Zenghui Wang, Bo Xu, Shenghai Pei, Jiankai Zhu, Ting Wen, Chenyin Jiao, Jing Li, Maodi Zhang, Juan Xia
Summary: Here, we review the research progress in two-dimensional van der Waals heterostructures, including fabrication methods, material properties, and device applications, and provide perspectives on emerging research opportunities in this highly active field.
SCIENCE CHINA-INFORMATION SCIENCES
(2022)
Article
Optics
Ying Wang, Chenhai Shen, Mengjie He, Xueying Liu, Lin Li, Congxin Xia
Summary: We constructed Ge2SeTe/Sn2SSe two-dimensional van der Waals heterostructures and investigated their electronic structures and optoelectronic properties under different interface characteristics, interlayer coupling, strain, and electric field. The results show that the interface stacking patterns significantly affect the band gap values of the heterostructures, and broad optical absorption from visible to ultraviolet region can be achieved. Additionally, interlayer coupling, biaxial strain, or electric field can transform the band alignment of the heterostructures between type I and type II. Interestingly, the Se-S interface heterostructures exhibit high power conversion efficiency (-21.16%). Our work demonstrates the promising applications of 2D Janus Ge2SeTe/Sn2SSe heterostructures in optoelectronic devices.
JOURNAL OF LUMINESCENCE
(2023)
Article
Chemistry, Physical
Sheraz Ahmad, Khumal Sohail, Letian Chen, Hu Xu, H. U. Din, Zhen Zhou
Summary: Stacking two-dimensional materials through van der Waals forces offers a new approach for high-performance optoelectronic and renewable energy devices. This study investigates vdW heterostructures consisting of GeC, ZnO, and Al2SO monolayers using first-principles computations. The results show that GeC (ZnO)-Al2SO vdWHs are stable type-II semiconductors with indirect (direct) band gaps, which significantly suppress the recombination of charge carriers and make them promising for light detection and harvesting applications. The computational findings pave the way for the design of vdWHs for future optoelectronic and photovoltaic devices.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2023)
Article
Chemistry, Multidisciplinary
Jihyun Kim, Dongjoon Rhee, Okin Song, Miju Kim, Yong Hyun Kwon, Dong Un Lim, In Soo Kim, Vlastimil Mazanek, Lukas Valdman, Zdenek Sofer, Jeong Ho Cho, Joohoon Kang
Summary: By manipulating the lateral and vertical assembly of solution-processed 2D vdW materials, wafer-scale vdW heterostructures are successfully demonstrated, showing potential applications in various electronic devices.
ADVANCED MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Maria Ramos, Francisco Marques-Moros, Dorye L. Esteras, Samuel Manas-Valero, Eudomar Henr iquez-Guerra, Marcos Gadea Jose, Jose J. Baldovi, Josep Canet-Ferrer, Eugenio Coronado, M. Reyes Calvo
Summary: This study investigates the photoluminescence properties of a stacked structure of single-layer MoS2 and van der Waals FePS3. The results demonstrate the outstanding performance of this heterostructure in terms of energy band alignment and charge transfer, providing potential for rational design of van der Waals heterostructures with advanced optoelectronic properties.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Sabine M. Neumayer, Mengwei Si, Junkang Li, Pai-Ying Liao, Lei Tao, Andrew O'Hara, Sokrates T. Pantelides, Peide D. Ye, Petro Maksymovych, Nina Balke
Summary: The van der Waals layered material CuInP2S6 exhibits interesting functional behavior such as the existence of four uniaxial polarization states, polarization reversal through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. The high mobility of Cu ions plays a key role in these characteristics, leading to unusual ferroelectric behavior. By applying selected DC voltage pulses, researchers demonstrate ionically controlled ferroelectric behavior and observe an increase in total switchable polarization due to the existence of a high polarization phase stabilized by an internal electric field.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Review
Chemistry, Multidisciplinary
Qianying Tang, Fang Zhong, Qing Li, Jialu Weng, Junzhe Li, Hangyu Lu, Haitao Wu, Shuning Liu, Jiacheng Wang, Ke Deng, Yunlong Xiao, Zhen Wang, Ting He
Summary: An infrared photodetector serves as a critical component in various fields such as national defense, military, communications, and astronomy. The emergence of 2D materials offers new possibilities for developing next-generation infrared detectors, but challenges such as thickness limitations and immature preparation techniques still exist.
Review
Materials Science, Multidisciplinary
Mohammad Jafar Molaei, Mohammad Younas, Mashallah Rezakazemi
Summary: The emergence of 2D materials has led to the development of novel van der Waals heterostructures (vdWHs) used in photovoltaic devices and solar cells. These structures offer high conversion efficiencies, enhanced light absorption, and a thin atomic structure. The inter-layer exciton in the vdWHs has a longer lifetime and can be modulated by inserting insulating interlayers.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Yong Xie, Yu Sun, Huibing Tao, Xin Wang, Jing Wu, Kaikai Ma, Li Wang, Zhuo Kang, Yue Zhang
Summary: Efforts have been focused on high-performance electrocatalysts for water splitting to address the issue of fossil fuel scarcity. With the development of in situ techniques, understanding the dynamic service behaviors of electrocatalysts has become crucial for establishing lifetime structure-performance correlations. Critical challenges and prospects are discussed for establishing these correlations.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Xin Wang, Jing Wu, Yuwei Zhang, Yu Sun, Kaikai Ma, Yong Xie, Wenhao Zheng, Zhen Tian, Zhuo Kang, Yue Zhang
Summary: Vacancy defect engineering has been widely used to shape the physicochemical properties of diverse catalysts. This review provides a comprehensive understanding of vacancy engineering in 2D TMDs-based electrocatalysis, covering its background, manufacturing, characterization, and application in the hydrogen evolution reaction. The review also explores the correlations between specific vacancy regulation routes and catalytic performance improvement, and discusses the future prospects of vacancy engineering in advanced defect catalysts.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Chenzhe Xu, Suicai Zhang, Wenqiang Fan, Feiyu Cheng, Haochun Sun, Zhuo Kang, Yue Zhang
Summary: By modifying the interface molecules for CsPbI3 perovskite, the electron transfer barrier is reduced and the crystal quality is improved, resulting in a decrease of trap-assisted charge recombination and interfacial energetic loss. As a result, the devices achieve an impressive efficiency of 20.98% and a record-low V-OC deficit of 0.451 V.
ADVANCED MATERIALS
(2023)
Article
Computer Science, Artificial Intelligence
Yimeng Ren, Kun Liang, Yuhu Shang, Xiankun Zhang
Summary: This study proposes a fully adaptive recommendation paradigm named TERD based on the Knowledge Distillation technique, aiming to improve the recommendation effect of the top positions. The experimental evaluation demonstrates that the TERD scheme effectively resolves the Top-enhanced recommendation issue.
COMPLEX & INTELLIGENT SYSTEMS
(2023)
Article
Materials Science, Multidisciplinary
Jiayi Sun, Xuan Zhao, Haonan Si, Fangfang Gao, Bin Zhao, Tian Ouyang, Qi Li, Qingliang Liao, Yue Zhang
Summary: In this study, CsPbBr2I quantum dots (CQDs) with surface modulation were used to fabricate high-detectivity and stable photodetectors. The surface modulation not only passivates defects and inhibits vacancies, but also enhances hole transport capacity by modulating energy level mismatch. The assembled CsPbBr2I photodetectors demonstrated a responsivity of 0.375 A W-1, a detectivity of 1.12 x 10(13) Jones, and an on/off ratio of 10(4). Furthermore, the CsPbBr2I photodetectors exhibited excellent long-term stability for 12 weeks and could withstand 1000 bending cycles. This work provides a guideline for the development of perovskite in wireless optical communication.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Tian Ouyang, Xuan Zhao, Xiaochen Xun, Fangfang Gao, Bin Zhao, Shuxin Bi, Qi Li, Qingliang Liao, Yue Zhang
Summary: Self-powered photodetectors are crucial in UV communication, but suboptimal charge utilization hinders their performance. This study presents a self-powered photodetector designed to improve charge utilization using photothermal effect and enhanced conductivity. The device exhibits high responsivity and fast response time, and has been successfully applied in a UV communication system.
Article
Nanoscience & Nanotechnology
Li Gao, Xiankun Zhang, Huihui Yu, Mengyu Hong, Xiaofu Wei, Zhangyi Chen, Qinghua Zhang, Qingliang Liao, Zheng Zhang, Yue Zhang
Summary: Two-dimensional (2D) MoS2 is a promising channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS2 is compromised by vacancy defects, particularly sulfur vacancies (V-S). Understanding the impact of these defects on transistor reliability has been challenging. In this study, we establish a simulated initiator to track the evolution of vacancy defects in MoS2 and their influence on transistor reliability.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Jiankun Xiao, Kuanglei Chen, Xiankun Zhang, Xiaozhi Liu, Huihui Yu, Li Gao, Mengyu Hong, Lin Gu, Zheng Zhang, Yue Zhang
Summary: Researchers have achieved ohmic contact between metal and monolayer MoS2 by introducing a large number of sulfur vacancies, which significantly reduces contact resistance and enables high-performance MoS2 FETs. The dominant factor driving enhanced electrical performance is the increased electron doping caused by sulfur vacancies. This study provides a simple method to promote the development of atomically thin integrated circuits.
Article
Materials Science, Multidisciplinary
Mengyu Hong, Xiankun Zhang, Yu Geng, Yunan Wang, Xiaofu Wei, Li Gao, Huihui Yu, Zhihong Cao, Zheng Zhang, Yue Zhang
Summary: Metal-semiconductor contacts play a crucial role in semiconductor devices. Researchers propose a nanobelt-assisted transfer strategy that enables the universal transfer of over 20 different types of electrodes. The contacts prepared using this strategy exhibit low Schottky barriers and adhere to the Schottky-Mott rule.
Article
Nanoscience & Nanotechnology
Lihua Wang, Xiaoyu He, Xiankun Zhang, Xiaofu Wei, Kuanglei Chen, Li Gao, Huihui Yu, Mengyu Hong, Zheng Zhang, Yue Zhang
Summary: This study reports an ultrahigh-rectification-ratio WSe2 homojunction diode achieved by semi-floating gate doping. The use of direct charge trapping mode and oxygen plasma treatment enhances the interface properties, charge transfer efficiency, and rectification performance.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Liangxu Xu, Xuan Zhao, Xiaochen Xun, Fangfang Gao, Lusen Gao, Shuxin Bi, Liubing Fan, Shuchang Zhao, Qingliang Liao, Yue Zhang
Summary: In this study, an omnidirectionally strain-unperturbed tactile array was prepared by manipulating the fiber orientations in quasi-homogeneous elastomer meshes. The tactile array exhibited high strain insensitivity and robustness even after severe mechanical deformation. By integrating the tactile array with a microcontroller, an accurate tactile interaction system was achieved under multiaxial tensile strain.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Review
Chemistry, Physical
Mohammed Ismail Beddiar, Xiankun Zhang, Baishan Liu, Zheng Zhang, Yue Zhang
Summary: This article reviews the progress in transforming bipolar 2D materials into unipolar p-type/n-type semiconductors, focusing on the factors influencing carrier behavior and the application of these conversion strategies in device performance tuning and new structure device construction.
Proceedings Paper
Computer Science, Artificial Intelligence
XianKun Zhang, SiYuan Peng
Summary: This article proposes a method that combines context and text global relationship modeling to address the issue of word segmentation errors in Chinese Named Entity Recognition (NER). By utilizing self-attention weights to generate assist features, it dynamically strengthens contextual representation. Experiments show that this method is competitive on datasets such as Weibo and Resume, and it is applied in the field of food safety.
NATURAL LANGUAGE PROCESSING AND CHINESE COMPUTING, NLPCC 2022, PT I
(2022)
