Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charge Trapping Memory

标题
Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charge Trapping Memory
作者
关键词
-
出版物
INTEGRATED FERROELECTRICS
Volume 151, Issue 1, Pages 56-60
出版商
Informa UK Limited
发表日期
2014-05-14
DOI
10.1080/10584587.2014.899427

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