期刊
IEICE ELECTRONICS EXPRESS
卷 11, 期 14, 页码 -出版社
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
DOI: 10.1587/elex.11.20140447
关键词
ferroelectric transistor; paper substrate; P(VDF-TrFE); P3HT
资金
- University of Seoul for Byung-Eun Park
A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (V-TH) window of similar to 20V for the transistor on paper. An on/off current ratio of similar to 10(2) is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).
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