Electrochemical growth of tin(II) oxide films: Application in photocatalytic degradation of methylene blue

We have investigated the semiconducting and photoelectrochemical properties of SnO films grown potentiostatically on tin substrate. The oxide is characterized by X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The anodic process corresponds to the formation of SnO center dot nH(2)O pre-passive layer that is removed upon increasing potential due to surface etching at the metal/oxide interface. SnO films deposited for long durations (> 50 mn) are uniform and well adhered; they thicken up to similar to 50 nm by diffusion-controlled process and the growth follows a direct logarithmic law. The thickness is determined by coulometry and the X-ray diffraction indicates the tetragonal SnO phase (SG: P4/mmm) with a crystallite size of 32 nm. The Mott-Schottky plot is characteristic of n type conductivity with an electrons density of 5.72 x 10(18) cm(-3), a flat band potential of -0.09 V-SCE and a depletion width of similar to 10 nm. The valence band, located at 5.91 eV below, vacuum is made up of hybridized O2- :2p Sn2+;5s while the conduction band (4.45 eV) derives from Sn2+:5p orbital. The electrochemical impedance spectroscopy (EIS) measured in the range (10(-2)-10(5) Hz) shows the contribution of the bulk and grain boundaries. The energy band diagram predicts the photodegradation of methylene blue on SnO films. 67% of the initial concentration (10 mg L-1) disappears after 3 h of exposure to visible light (9 mW cm(-2)) with a quantum yield of 0.072. (C) 2014 Elsevier Ltd. All rights reserved.