The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

标题
The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature
作者
关键词
Mo-doped (PVC+TCNQ) interfacial layer, Energy density distribution profile of interface states, Effect of Mo-doping on electrical characteristics, Schottky barrier diodes (SBDs)
出版物
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 33, Issue -, Pages 140-148
出版商
Elsevier BV
发表日期
2015-02-19
DOI
10.1016/j.mssp.2015.01.050

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