Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor

标题
Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor
作者
关键词
Dual material gate, DMG-GNRFET, Current ratio, Band to band tunneling, Edge roughness
出版物
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 31, Issue -, Pages 223-228
出版商
Elsevier BV
发表日期
2014-12-18
DOI
10.1016/j.mssp.2014.11.051

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