Synthesis of p-type phosphorus doped ZnSe nanowires and their applications in nanodevices

High-quality phosphorus (P) doped ZnSe nanowires (NWs) were synthesized through a chemical vapor deposition (CVD) method. The p-type conductivity of P-doped ZnSe NWs was confirmed by field-effect transistors (FETs), which show the hole mobility (mu(h)) of 0.173 cm(2)V(-1)s(-1) and carrier concentration (n(h)) of 5.5 x 10(19) cm(-3), representing the highest value achieved for p-type ZnSe nanostructures thus far. High-performance photodetectors (PDs) were fabricated by construction of ZnSe/Si p-n heterojunction diodes, which show high responsivity (R) of 1.1 x 10(5) A/W and photoconductivity gain (G) of 2.9 x 10(5) at forward bias and fast response speed of 74/153 mu s at reverse bias to the incident light. These results reveal that such P-doped ZnSe NWs are excellent candidates for optoelectronic applications. (C) 2014 Published by Elsevier B.V.