期刊
MATERIALS LETTERS
卷 157, 期 -, 页码 193-196出版社
ELSEVIER
DOI: 10.1016/j.matlet.2015.05.012
关键词
Thin films; Energy storage and conversion; Simulation and modeling; Semiconductors; Electrical properties; Thermal properties
资金
- STMicroelectronics-IEMN Common Laboratory
- European Research Council [338179]
- French RENATECH Network
- European Research Council (ERC) [338179] Funding Source: European Research Council (ERC)
Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7 W/cm(2) at Delta T= 30 K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10 nm thick Silicon has 10 x higher efficiency than bulk. (C) 2015 Elsevier B.V. All rights reserved.
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