4.6 Article

Thermoelectric energy conversion: How good can silicon be?

期刊

MATERIALS LETTERS
卷 157, 期 -, 页码 193-196

出版社

ELSEVIER
DOI: 10.1016/j.matlet.2015.05.012

关键词

Thin films; Energy storage and conversion; Simulation and modeling; Semiconductors; Electrical properties; Thermal properties

资金

  1. STMicroelectronics-IEMN Common Laboratory
  2. European Research Council [338179]
  3. French RENATECH Network
  4. European Research Council (ERC) [338179] Funding Source: European Research Council (ERC)

向作者/读者索取更多资源

Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7 W/cm(2) at Delta T= 30 K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10 nm thick Silicon has 10 x higher efficiency than bulk. (C) 2015 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据