Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM

(2014) Taehui Na et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

(2014) Chun-Yeol You   JOURNAL OF APPLIED PHYSICS

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

(2014) Luc Thomas et al.   JOURNAL OF APPLIED PHYSICS

High reliability sensing circuit for deep submicron spin transfer torque magnetic random access memory

(2013) Wang Kang et al.   ELECTRONICS LETTERS

High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

(2012) Guenole Jan et al.   Applied Physics Express

Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions

(2012) Yue Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Prospect of STT-RAM Scaling From Readability Perspective

(2012) Yaojun Zhang et al.   IEEE TRANSACTIONS ON MAGNETICS

Failure and reliability analysis of STT-MRAM

(2012) W.S. Zhao et al.   MICROELECTRONICS RELIABILITY

STT-RAM Cell Optimization Considering MTJ and CMOS Variations

(2011) Yaojun Zhang et al.   IEEE TRANSACTIONS ON MAGNETICS

A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)

(2010) Jisu Kim et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS