期刊
MATERIALS LETTERS
卷 139, 期 -, 页码 116-118出版社
ELSEVIER
DOI: 10.1016/j.matlet.2014.10.056
关键词
Semiconductors; Nanostructure; Luminescence
资金
- Department of Science and Technology (DST), India
Aggregated tin oxide (SnO2/SnO) nanostructures were produced in the presence of double tin salts (SnCl4 center dot 5H(2)O, SnCl2 center dot 2H(2)O), metal hydroxyl precursors (caustic soda and ammonia), poly(oxy)ethylene glycol-400 and water as a solvent, by a hydrothermal method. The crystal structure, functional groups, morphology, and photoluminescence properties of the SnO2/SnO nanostructures are characterized by X-ray diffraction (XRD), Fourier transform infrared (FUR), Energy dispersive X-ray (EDX), scanning electron microscopy (SEM) and Photoluminescence (PL) analysis. The XRD and SEM studies indicated the formation of a mixed phase of SnO2/SnO with a nanocrystalline nature. The FUR and EDX analyses also confirmed the formation of the Sn-O bond. The PL emission spectrum of the SnO2/SnO nanostructures was observed in the visible region (blue, green, yellow and red emission peaks), due to the oxygen vacancies or other defects, and it could be used for luminescent device applications. (C) 2014 Elsevier B.V. All rights reserved.
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