Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz

标题
Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 9, Pages 2815-2820
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-08-20
DOI
10.1109/ted.2013.2274575

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