Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

(2011) T. J. Prosa et al.   APPLIED PHYSICS LETTERS

Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN

(2011) Sameer Chhajed et al.   APPLIED PHYSICS LETTERS

Effect of current spreading on the efficiency droop of InGaN light-emitting diodes

(2011) Han-Youl Ryu et al.   OPTICS EXPRESS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading

(2011) Ya Ya Kudryk et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes

(2010) R. M. Farrell et al.   APPLIED PHYSICS LETTERS

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

(2010) X. Ni et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer

(2010) Chung-Hsun Jang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Mobility Enhancement of Polycrystalline MgZnO/ZnO Thin Film Layers With Modulation Doping and Polarization Effects

(2010) Chih-I Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method

(2010) I-Lin Lu et al.   JOURNAL OF APPLIED PHYSICS

Light emission polarization properties of semipolar InGaN/GaN quantum well

(2010) Hung-Hsun Huang et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

(2009) Markus Maier et al.   APPLIED PHYSICS LETTERS

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Investigation of Efficiency Droop Behaviors of InGaN/GaN Multiple-Quantum-Well LEDs With Various Well Thicknesses

(2009) Yun-Li Li et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes

(2009) Hung-Hsun Huang et al.   JOURNAL OF APPLIED PHYSICS

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes

(2008) Tron-Min Chen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes

(2008) Sungmin Hwang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High power light-emitting diode junction temperature determination from current-voltage characteristics

(2008) A. Keppens et al.   JOURNAL OF APPLIED PHYSICS

Coupled modeling of current spreading, thermal effects and light extraction in III-nitride light-emitting diodes

(2008) M V Bogdanov et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY