标题
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 2, Pages 292-301
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-12-08
DOI
10.1109/ted.2011.2175228
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
- (2011) Genquan Han et al. APPLIED PHYSICS LETTERS
- Impact of field-induced quantum confinement in tunneling field-effect devices
- (2011) William G. Vandenberghe et al. APPLIED PHYSICS LETTERS
- Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor
- (2011) Paul M. Solomon et al. IEEE ELECTRON DEVICE LETTERS
- Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach
- (2011) William Vandenberghe et al. JOURNAL OF APPLIED PHYSICS
- Drain voltage dependent analytical model of tunnel field-effect transistors
- (2011) Anne S. Verhulst et al. JOURNAL OF APPLIED PHYSICS
- Tunnel Field Effect Transistor With Raised Germanium Source
- (2010) Sung Hwan Kim et al. IEEE ELECTRON DEVICE LETTERS
- Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width
- (2010) Daniele Leonelli et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Zener tunneling in semiconductors under nonuniform electric fields
- (2010) William Vandenberghe et al. JOURNAL OF APPLIED PHYSICS
- Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs
- (2009) K. Boucart et al. IEEE ELECTRON DEVICE LETTERS
- Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates
- (2008) Anne S. Verhulst et al. IEEE ELECTRON DEVICE LETTERS
- Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
- (2008) Osama M. Nayfeh et al. IEEE ELECTRON DEVICE LETTERS
- Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
- (2008) Anne S. Verhulst et al. JOURNAL OF APPLIED PHYSICS
- A new definition of threshold voltage in Tunnel FETs
- (2008) Kathy Boucart et al. SOLID-STATE ELECTRONICS
- Fully-depleted Ge interband tunnel transistor: Modeling and junction formation
- (2008) Qin Zhang et al. SOLID-STATE ELECTRONICS
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