Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

出版年份 2008 全文链接

标题

作者

关键词

出版物

Volume 29, Issue 9, Pages 1074-1077

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-08-28

DOI

10.1109/led.2008.2000970

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