期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 11, 期 3, 页码 490-494出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2011.2156796
关键词
Flash memory; high-dielectric constant (high-k); inter-poly dielectric (IPD); YxAlyO; yttrium doping
资金
- RGC of HKSAR, China [HKU 713308E]
- University of Hong Kong [200707176147]
- (Nanotechnology Research Institute) of the University of Hong Kong [00600009]
- National Nature Science Foundation of China [60976091]
Yttrium-doped Al2O3 (YxAlyO) with different yttrium contents prepared by co-sputtering method is investigated as the inter-poly dielectric (IPD) for flash memory applications. A poor SiO2-like interlayer formed at the IPD/Si interface is confirmed by X-ray photoelectron spectroscopy, and can be suppressed by Y doping through the transformation of silica into silicate. Compared with Al2O3 and Y2O3 films, the optimized YxAlyO film shows lower interface-state density, lower bulk charge-trapping density, higher dielectric constant, and smaller gate leakage, due to the suppressed interlayer and good thermal property ascribed to appropriate Y and Al contents in the film. Therefore, the optimized YxAlyO film is a promising candidate as the IPD for flash memory.
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