Article
Chemistry, Multidisciplinary
Jungu Chun, Jaewoo Lee, Hyeran Cho, Gyu-Tae Kim
Summary: The effect of alpha-molybdenum trioxide as a charge buffer layer on rhenium disulfide field effect transistors is investigated, showing saturated transconductance under critical gate voltage and reduced unintentional shifts of threshold voltages.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Hao Shi, Renate Fetzer, Chongchong Tang, Dorothee Vinga Szab, Sabine Schlabach, Annette Heinzel, Alfons Weisenburger, Adrian Jianu, Georg Mueller
Summary: The corrosion behavior of four different alumina-forming austenitic model alloys in oxygen containing molten Pb at 600 and 650 degrees C has been investigated. One composition with minor additions of Y and Nb and low Ni concentration shows corrosion resistance at 650 degrees C, where Y and Nb have a significant positive influence on the corrosion resistance and phase composition of the alloys.
Article
Chemistry, Physical
Guan-Yu Chen, Chia-Hsiu Hsu, Bo-You Liu, Li-Wei Chang, Deng-Sung Lin, Feng-Chuan Chuang, Pin-Jui Hsu
Summary: The growth and quantum well electronic states of 2D Pb nanoislands on Nb-doped SrTiO3(001) were investigated using scanning tunneling microscopy and spectroscopy. Unlike other substrates, isolated Pb nanoislands with a height of 4 atomic layers were formed on the Nb-doped SrTiO3(001) surface as the building blocks for island growth. Energy-dependent scattering phase shift shows a metallic-like interface similar to Pb/Ag(1 1 1).
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Ceramics
Piyush Sapkota, Ichiro Fujii, Sangwook Kim, Shintaro Ueno, Chikako Moriyoshi, Yoshihiro Kuroiwa, Satoshi Wada
Summary: The study investigated the effects of one-step and two-step calcination methods on the crystal structure, microstructure, and electrical properties of BaTi1-2xMnxNbxO3 ceramics. It was found that ceramics calcined using the two-step method had lower dielectric loss and higher dielectric constants at high temperatures, making them potential candidates for temperature stable, DC-bias free capacitor applications.
CERAMICS INTERNATIONAL
(2022)
Article
Materials Science, Multidisciplinary
Hao Shi, Renate Fetzer, Adrian Jianu, Alfons Weisenburger, Annette Heinzel, Fabian Lang, Georg Mueller
Summary: Corrosion tests in oxygen-containing molten Pb at 600 degrees C indicated that Cu or Ti additions degrade the corrosion resistance of HEAs, while Nb addition showed promising corrosion behavior. After long exposure, all three alloys experienced phase transformations, resulting in the identification of new phases.
Article
Chemistry, Multidisciplinary
Anthony Pugliese, Badri Shyam, Gil M. Repa, Anh Hung Nguyen, Apurva Mehta, Edmund B. Webb, Lisa A. Fredin, Nicholas C. Strandwitz
Summary: Combined experimental and computational approaches were used to gain a better understanding of the structure and electronic properties of amorphous aluminum oxide. Grazing incidence X-ray scattering measurements were performed on aluminum oxide thin films grown via thermal atomic layer deposition, revealing structures similar to those of solid-state amorphous alumina and molten alumina. Structural models based on crystalline alumina polymorphs (PDFgui) and amorphous alumina (molecular dynamics, MD) were examined and compared to experimental data. The electronic structure of the amorphous alumina models provided additional insights into the band structure and electronic defects specific to amorphous alumina.
Article
Chemistry, Physical
Zhaodandan Ma, Shuo Cong, Huan Chen, Zhu Liu, Yuanyuan Dong, Rui Tang, Tian Qiu, Yong Chen, Xianglong Guo
Summary: The corrosion behavior of alumina-forming austenitic (AFA) stainless steels with different Nb additions in a supercritical carbon dioxide environment was investigated. Steels with low Nb content had a novel structure with a double oxide film and a transition layer. The oxidation resistance improved with the addition of 0.6 wt.% Nb, but decreased significantly at higher Nb content due to the formation of thick Fe-rich nodules and internal oxide zone. After exposure at 500 ?, fewer spinels and thinner oxide scales were found.
Article
Geochemistry & Geophysics
Pengfei Tian, Xiaoyong Yang, Yulun Xiao, Wanming Yuan, Zifei He
Summary: The Bayan Obo deposit, the world's largest REE resource, has been studied using digital petrographic images and in situ dating methods. The results show that different minerals and ores in the Bayan Obo deposit have multiple or protracted isotopic ages, indicating the influence of multiple geological events and a complex formation process.
Article
Crystallography
Yoanlys Hernandez, Bernhard Stampfer, Tibor Grasser, Michael Waltl
Summary: This study explores using physical reliability models for aging simulations of SiC MOS transistors in pseudo-CMOS logic inverter circuits, evaluating the impact of BTI degradation phenomena. Through Spice simulations, the propagation delay time is extracted, while considering device recovery during low bias phases. The importance of a suitable physical defect model for accurately analyzing circuit operation is discussed.
Article
Engineering, Electrical & Electronic
Nobuya Banno, Kensuke Kobayashi, Akira Uchida, Hitoshi Kitaguchi, Akiko Takenouchi, Makoto Watanabe
Summary: A novel superconducting joint method using high-temperature-tolerable (HTT) superconducting Nb-alloy intermedia has been developed to establish superconducting joints between NbTi and Nb3Sn wires, with ultra-low resistance and high success rate. However, there is a large scattering of I-c in the joints between NbTi and HTT Nb-alloy, possibly due to the cracking of NbTi filaments.
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
(2022)
Article
Physics, Applied
Taifang Wang, Yuan Zong, Luca Nela, Elison Matioli
Summary: In this study, we demonstrate the use of p-type lithium nickel oxide as a heterojunction gate combined with tri-gate structures to achieve stable enhancement-mode high-electron-mobility transistors. The high-quality lithium nickel oxide film, coated by pulsed-laser-deposition over tri-gate structures, enables the fabrication of enhancement-mode devices without the need for additional epitaxial layers or barrier regrowth. The heterojunction tri-gate devices exhibit low on-resistance, high maximum on-current, and excellent reliability.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
J. Franco, H. Arimura, J. -f. de Marneffe, S. Brus, R. Ritzenthaler, K. Croes, B. Kaczer, Naoto Horiguchi
Summary: This article discusses the impact of novel low-temperature atomic hydrogen and oxygen treatments on gate stack properties. Various low thermal budget replacement gate (RMG) stacks are evaluated and benchmarked against high-temperature RMG and gate-first counterparts. Results show that the atomic hydrogen treatment improves both pMOS and nMOS device performance and reliability, making it a complete solution for low thermal budget CMOS.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Fu-Yuan Jin, Po-Hsun Chen, Wei-Chun Hung, Wei-Chieh Hung, Chin-Han Chang, Fong-Min Ciou, Yu-Shan Lin, Kai-Chun Chang, Yun-Hsuan Lin, Ting-Tzu Kuo, Kuan-Hsu Chen, Chien-Hung Yeh, Ting-Chang Chang
Summary: In this study, the increase in breakdown voltage of a SiC junction barrier Schottky (JBS) diode under negative bias stress (NBS) is investigated. It is found that the forward characteristic of SiC JBS does not change after NBS. The increase in breakdown voltage is greater with higher stress voltage, higher compliance current, and lower NBS temperature. Simulated electric field under NBS reveals that the increase in breakdown voltage is induced by electron injection in the oxide layer of edge termination.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Woonggi Hong, Dong Sik Oh, Sung-Yool Choi
Summary: The study reveals that depositing a passivation layer of aluminum oxide on molybdenum disulfide thin film transistors can effectively reduce the threshold voltage shift in positive bias temperature stability testing, leading to improved device stability.
JOURNAL OF INFORMATION DISPLAY
(2021)
Article
Physics, Applied
D. M. Fleetwood
Summary: This article provides an overview of the radiation response of nanoscale metal-oxide-semiconductor (MOS) devices. The response of MOS devices to total-ionizing-dose (TID) radiation is strongly affected by size scaling and the migration to three-dimensional structures. The trapping of radiation-induced charges and charge transport from surrounding materials play critical roles in the TID response of nanoscale MOS devices.
APPLIED PHYSICS LETTERS
(2022)