Article
Engineering, Electrical & Electronic
Shunjie Yu, Xiaolong Zhao, Mengfan Ding, Pengju Tan, Xiaohu Hou, Zhongfang Zhang, Wenxiang Mu, Zhitai Jia, Xutang Tao, Guangwei Xu, Shibing Long
Summary: This letter presents a high-performance solar-blind phototransistor based on N-2-annealed beta-Ga2O3 microflake for weak light detection. The device exhibits ultra-low dark current, high external quantum efficiency, and narrow-band response, achieving ultra-high responsivity and record-high detectivity under specific illumination conditions. The device demonstrates superior weak-light-detection performance for solar-blind photodetection applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Yingqiu Zhang, Yuefei Wang, Rongpeng Fu, Jiangang Ma, Haiyang Xu, Bingsheng Li, Yichun Liu
Summary: The authors report the development of an indium tin oxide (ITO) decorated solar-blind deep ultraviolet photodetector based on high quality beta-Ga2O3 single crystal microwires. The device exhibits excellent performances including high responsivity, low dark current, fast rise and fall time, and high solar-blind/visible rejection ratio.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Yixiong Zheng, Md Nazmul Hasan, Jung-Hun Seo
Summary: This study demonstrates Si/beta-Ga2O3 solar-blind photodetectors with high photoresponsivity and quantum efficiency. The unique heterogeneous integration method provides a viable route for achieving high-performance photodetection systems.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Chemistry, Multidisciplinary
Yanan Zhang, Shujie Jiao, Junhua Zhang, Shuo Liu, Dongbo Wang, Shiyong Gao, Jinzhong Wang
Summary: A GaOOH/Ga2O3 heterojunction was achieved through a one-step annealing treatment, and its solar blind photoresponse performance was characterized using photoelectrochemical detectors. The results showed that the GaOOH/Ga2O3 heterojunction detector exhibited superior performance in pure solar-blind ultraviolet detection.
Article
Chemistry, Multidisciplinary
Yuan Qin, Li-Heng Li, Zhaoan Yu, Feihong Wu, Danian Dong, Wei Guo, Zhongfang Zhang, Jun-Hui Yuan, Kan-Hao Xue, Xiangshui Miao, Shibing Long
Summary: This study focuses on ultrahigh-performance metal-semiconductor-metal (MSM) solar-blind photodetectors (SBPDs) based on post-annealed amorphous (a-) Ga2O3, demonstrating superhigh sensitivity and response speed, as well as ultrahigh photo-to-dark current ratio and specific detectivity, indicating practicality for applications in solar-blind imaging, environmental monitoring, artificial intelligence, and machine vision.
Article
Materials Science, Multidisciplinary
Yuehui Wang, Shengyao Li, Jia Cao, Yucheng Jiang, Yang Zhang, Weihua Tang, Zhenping Wu
Summary: Ga2O3-based solar-blind ultraviolet photodetectors have garnered significant attention for various applications. While they have made progress in key metrics, such as responsivity and detectivity, their response time remains slow. This study investigates the impact of illumination intensity and bias voltage on the response speed of a Ga2O3-based PD, revealing the mechanisms behind accelerated response time. The findings provide insights for optimizing the performance of Ga2O3-based PDs.
MATERIALS & DESIGN
(2022)
Article
Nanoscience & Nanotechnology
Sangbin Park, Taejun Park, Joon Hui Park, Ji Young Min, Yusup Jung, Sinsu Kyoung, Tai-Young Kang, Kyung Hwan Kim, You Seung Rim, Jeongsoo Hong
Summary: Self-powered deep-ultraviolet photodetectors were constructed by continuously depositing an Ag/Ag2O layer on a beta-Ga2O3 epitaxial layer. It was found that photodetectors using a thin Ag film as the top electrode exhibited high photoresponsivity, while Ag films thinner than the threshold thickness showed poor performance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Zeming Li, Teng Jiao, Wancheng Li, Gaoqiang Deng, Wei Chen, Zhengda Li, Zhaoti Diao, Xin Dong, Baolin Zhang, Yuantao Zhang, Zengjiang Wang, Guotong Du
Summary: Beta-Ga2O3 is a promising material for solar-blind UV detection, and the crystal quality significantly affects the performance of photodetectors. In this study, high quality homoepitaxial beta-Ga2O3 films were grown by MOCVD for SBUV PD fabrication, demonstrating excellent performance for both photoconductor PD and SBD PD. The responsivity and EQE of photoconductor PD were 1.08 A/W and 5.32 x 102% under 254nm illumination, while the I-254/Idark and rejection ratio of SBD PD were 320 and 42, respectively.
Article
Nanoscience & Nanotechnology
Tiancai Jiang, Ying Qiu, Jin Tao, Xi Xiao
Summary: In this study, Ga2O3@Al2O3 core-shell nanowires were synthesized for high-performance photodetectors. The nanowires exhibited high sensitivity, fast response speed, and superior specific detectivity and rejection ratio. This method provides an effective approach to design and prepare high-performance photonic devices.
ACS APPLIED NANO MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Taejun Park, Sangbin Park, Joon Hui Park, Ji Young Min, Yusup Jung, Sinsu Kyoung, Tai Young Kang, Kyunghwan Kim, You Seung Rim, Jeongsoo Hong
Summary: A high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated. The detector exhibits rectification characteristics and high photo-responsivity at zero bias voltage.
Article
Physics, Applied
Zhiyao Zheng, Kewei Liu, Zhen Cheng, Baoshi Qiao, Xing Chen, Chang Zhou, Jialin Yang, Qiu Ai, Yongxue Zhu, Binghui Li, Lei Liu, Dezhen Shen
Summary: In this study, a high-quality single beta-Ga2O3 microbelt photodetector is fabricated using low-pressure chemical vapor deposition and in situ atmospheric pressure annealing techniques. The device exhibits high responsivity, low dark current, high speed, and excellent wavelength selectivity, indicating its potential for high-performance solar-blind UV photodetection.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Chao Wu, Fengmin Wu, Lipeng Deng, Shan Li, Shunli Wang, Lin Cheng, Aiping Liu, Jinbin Wang, Weihua Tang, Daoyou Guo
Summary: The selection of an appropriate electron transport layer (ETL) is crucial for the performance of photodetectors. However, developing efficient materials for deep UV photodetectors remains challenging. In this study, wide-bandgap SrSnO3 nanoparticles were used to construct heterojunction solar-blind photodetectors with Ga2O3. The SrSnO3 was annealed and doped with Y elements to improve carrier transportation efficiency. The resulting Y-O-2-SrSnO3 showed excellent photoelectrical performances in the photodetector based on beta-Ga2O3/Y-O-2-SrSnO3.
Article
Materials Science, Multidisciplinary
Chao Wu, Fengmin Wu, Haizheng Hu, Shunli Wang, Aiping Liu, Daoyou Guo
Summary: This review summarizes the recent research progress on self-powered solar-blind photodetectors based on Ga2O3. The detectors are classified into different types, and the fundamental properties of Ga2O3, the basic working principles of self-powered photodetectors, and the device processing developments are summarized. Finally, conclusions regarding recent advances, remaining challenges, and prospects are presented and discussed.
MATERIALS TODAY PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Yaping Li, Caihao Deng, Bo Huang, Shuai Yang, Jintao Xu, Genghui Zhang, Sujuan Hu, Dan Wang, Baiquan Liu, Zhong Ji, Linfeng Lan, Junbiao Peng
Summary: High-performance solar-blind (200-280 nm) ultraviolet (UV) photodetectors based on a low-cost thin-film ZnO/Ga2O3 heterojunction are constructed. The optimized photodetector shows high spectral selectivity, a high photo-to-dark current ratio, and fast response speed under 254 nm UV light. The use of a gate electrode in the three-terminal phototransistor amplifies responsivity and increases the photo-to-dark current ratio, while the built-in electric field at the ZnO/Ga2O3 heterojunction controls electron distribution and enhances device performance.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Hojoong Kim, Hae-Jun Seok, Joon Hui Park, Kwun-Bum Chung, Sinsu Kyoung, Han-Ki Kim, You Seung Rim
Summary: The study demonstrates an all oxide-based beta-Ga2O3 photodiode with excellent photoelectric performance for deep ultraviolet detection. The use of transparent conductive InZnSnO and InSnO as contacts allows for clear rectifying characteristics, while post-annealing treatment can modify the Schottky interface properties and influence the photoresponse.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Chaoliang Tan, Matin Amani, Chunsong Zhao, Mark Hettick, Xiaohui Song, Der-Hsien Lien, Hao Li, Matthew Yeh, Vivek Raj Shrestha, Kenneth B. Crozier, Mary C. Scott, Ali Javey
ADVANCED MATERIALS
(2020)
Article
Multidisciplinary Sciences
Hui-Chun Fu, Purushothaman Varadhan, Chun-Ho Lin, Jr-Hau He
NATURE COMMUNICATIONS
(2020)
Article
Chemistry, Physical
Siva Krishna Karuturi, Heping Shen, Astha Sharma, Fiona J. Beck, Purushothaman Varadhan, The Duong, Parvathala Reddy Narangari, Doudou Zhang, Yimao Wan, Jr-Hau He, Hark Hoe Tan, Chennupati Jagadish, Kylie Catchpole
ADVANCED ENERGY MATERIALS
(2020)
Article
Green & Sustainable Science & Technology
Hengyu Guo, Jie Chen, Longfei Wang, Aurelia Chi Wang, Yafeng Li, Chunhua An, Jr-Hau He, Chenguo Hu, Vincent K. S. Hsiao, Zhong Lin Wang
Summary: This study introduces a corona-type, mechanically stimulated triboelectric NAI generator that efficiently produces negative air ions for air purification. The device is simple, safe, and effective, offering a sustainable solution for improving indoor air quality.
NATURE SUSTAINABILITY
(2021)
Article
Materials Science, Multidisciplinary
Danhao Wang, Chen Huang, Xin Liu, Haochen Zhang, Huabin Yu, Shi Fang, Boon S. Ooi, Zetian Mi, Jr-Hau He, Haiding Sun
Summary: This study reports the demonstration of self-powered deep UV solar-blind photodetectors in a photoelectrochemical cell configuration, showing excellent responsivity, fast response speed, and large photocurrent density at 254 nm illumination. The superior performance can be attributed to the successful synthesis of uniform and defect-free AlGaN nanowires as well as the boosted carrier separation and collection efficiency through Ru decoration.
ADVANCED OPTICAL MATERIALS
(2021)
Review
Materials Science, Multidisciplinary
Xinwei Guan, Xuechao Yu, Dharmaraj Periyanagounder, Mercy Rose Benzigar, Jing-Kai Huang, Chun-Ho Lin, Jiyun Kim, Simrjit Singh, Long Hu, Guozhen Liu, Dehui Li, Jr-Hau He, Feng Yan, Qi Jie Wang, Tom Wu
Summary: 2D materials show promise in optoelectronic applications, particularly in infrared detectors, due to their unique electronic, optical, and mechanical properties. Recent research focuses on the design and optimization of devices in the short-wave, mid-wave, and long-wave infrared regimes, discussing the impact of 2D material properties on device performance and the characteristics and challenges of heterostructures based on 2D materials.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Multidisciplinary Sciences
Hyungjin Kim, Shiekh Zia Uddin, Der-Hsien Lien, Matthew Yeh, Nima Sefidmooye Azar, Sivacarendran Balendhran, Taehun Kim, Niharika Gupta, Yoonsoo Rho, Costas P. Grigoropoulos, Kenneth B. Crozier, Ali Javey
Summary: High-performance room-temperature infrared optoelectronic devices with actively variable spectra using black phosphorus demonstrate continuous and reversible tuning of operating wavelengths, as well as multiplexed nondispersive infrared gas sensing capabilities. This platform bridges a technological gap by combining active spectral tunability with high performance, offering a potential way to meet different requirements for emission and detection spectra in optoelectronic applications.
Review
Chemistry, Multidisciplinary
Konthoujam James Singh, Tanveer Ahmed, Prakalp Gautam, Annada Sankar Sadhu, Der-Hsien Lien, Shih-Chen Chen, Yu-Lun Chueh, Hao-Chung Kuo
Summary: Two-dimensional quantum dots derived from graphene, layered transition metal dichalcogenide, and phosphorene have unique optical and electronic properties, such as a tunable energy bandgap and efficient electronic transport; this review provides in-depth analysis of the characteristics of two-dimensional quantum dots materials, their synthesis methods, and opportunities and challenges for novel device applications, motivating more scientists and engineers to incorporate these materials into various electrical and optical fields.
Review
Chemistry, Multidisciplinary
Jiajia Zha, Mingcheng Luo, Ming Ye, Tanveer Ahmed, Xuechao Yu, Der-Hsien Lien, Qiyuan He, Dangyuan Lei, Johnny C. Ho, James Bullock, Kenneth B. Crozier, Chaoliang Tan
Summary: This review comprehensively summarizes the latest progress in infrared photodetectors based on 2D materials and nanophotonic structures, discussing the advantages of using 2D materials for infrared photodetectors, and classifying them based on their detection mechanisms, key figures-of-merit, and the principle of absorption enhancement using nanophotonic approaches.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Chien-Hung Wu, Shuo-Yen Lin, Wen-Chun Chung, Kow-Ming Chang, Po-Tsun Liu, Der-Hsien Lien, Yu-Hsuan Lin
Summary: The study focuses on improving the electrical characteristics of a-IGZO TFTs by using high-kappa material ZrO2 as dielectric and conducting post dual neutral beams treatment, resulting in enhanced performance of the experimental devices.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Niharika Gupta, Hyungjin Kim, Nima Sefidmooye Azar, Shiekh Zia Uddin, Der-Hsien Lien, Kenneth B. Crozier, Ali Javey
Summary: This research demonstrates bP-LEDs with high quantum efficiencies and wall-plug efficiencies. By integrating an Al2O3/Au optical cavity and an ITO conducting oxide layer, the emission efficiency and performance of the devices are significantly improved.
Article
Nanoscience & Nanotechnology
Daisuke Kiriya, Der-Hsien Lien
Summary: In this review paper, the authors summarize and discuss the recent works on the superacid treatment of monolayer transition metal dichalcogenide (TMDC) flakes, such as MoS2 and WS2, using bis(trifluoromethane)sulfonimide (TFSI) as the superacid molecule. They find that the superacid treatment can dramatically enhance the optical properties of TMDCs, especially the photoluminescence intensity. However, further studies are needed to understand the mechanism of the superacid treatment and explore its potential applications in monolayer TMDCs.
Review
Nanoscience & Nanotechnology
Po-Chih Chen, Wen-Chien Miao, Tanveer Ahmed, Yi-Yu Pan, Chun-Liang Lin, Shih-Chen Chen, Hao-Chung Kuo, Bing-Yue Tsui, Der-Hsien Lien
Summary: This review provides an overview of SiC defect inspection technologies and their impact on SiC devices, as well as discusses potential solutions to improve existing inspection techniques and reduce defect density.
NANOSCALE RESEARCH LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Chien-Hung Wu, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, Cheng Liu
Summary: This study focuses on the effects of Mg doping concentration in the bottom layer of a-IGZO thin film transistors. The results show that 5% Mg doping leads to the best device characteristics, including highest mobility, lowest threshold voltage, and nearly 108 in Ion/Ioff. Proper doping concentration can lower interface defect density and affect grain size, resulting in improved device performance. However, excessive doping concentration can degrade device characteristics.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Der-Hsien Lien
2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA)
(2021)
