期刊
ADVANCED SCIENCE
卷 8, 期 20, 页码 -出版社
WILEY
DOI: 10.1002/advs.202101106
关键词
Ga2O3; high detectivity; image sensors; photodetector arrays; solar-blind imaging; uniformity
资金
- National Natural Science Foundation of China (NSFC) [61925110, U20A20207, 11704134, 61821091, 51961145110]
- Ministry of Science and Technology (MOST) of China [2016YFA0201803, 2018YFB0406504]
- Strategic Priority Research Program of the Chinese Academy of Sciences (CAS) [XDB44000000]
- Key Research Program of Frontier Sciences of CAS [QYZDB-SSW-JSC048]
- Key Area Research and Development Program of Guangdong Province [2020B010174002]
- Opening Project of the Key Laboratory ofMicroelectronics Devices & Integration Technology, Institute of Microelectronics of CAS
- Key Laboratory of Nanodevices and Applications in Suzhou Institute of NanoTech and Nano-Bionics of CAS
This study focuses on ultrahigh-performance metal-semiconductor-metal (MSM) solar-blind photodetectors (SBPDs) based on post-annealed amorphous (a-) Ga2O3, demonstrating superhigh sensitivity and response speed, as well as ultrahigh photo-to-dark current ratio and specific detectivity, indicating practicality for applications in solar-blind imaging, environmental monitoring, artificial intelligence, and machine vision.
The growing demand for scalable solar-blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar-blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh-performance metal-semiconductor-metal (MSM) SBPDs based on amorphous (a-) Ga2O3 via a post-annealing process. The post-annealed MSM a-Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain-bandwidth product over 10(4) at 5 V. The SBPDs also show ultrahigh photo-to-dark current ratio of 3.9 x 10(7). Additionally, the PDs demonstrate super-high specific detectivity of 3.9 x 10(16) Jones owing to the extremely low noise down to 3.5 fW Hz(-1/2), suggesting high signal-to-noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large-scale, high-uniformity 32 x 32 image sensor array based on the post-annealed a-Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar-blind imaging, environmental monitoring, artificial intelligence and machine vision.
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