Electrical and Reliability Characteristics of High-$\kappa~{\rm HoTiO}_{3}~\alpha$-InGaZnO Thin-Film Transistors

标题
Electrical and Reliability Characteristics of High-$\kappa~{\rm HoTiO}_{3}~\alpha$-InGaZnO Thin-Film Transistors
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 1, Pages 66-68
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-01-04
DOI
10.1109/led.2013.2287349

向作者/读者发起求助以获取更多资源

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started