4.6 Article

Electrical Conduction and Reliability in Dual-Layered Graphene Heterostructure Interconnects

期刊

IEEE ELECTRON DEVICE LETTERS
卷 35, 期 12, 页码 1311-1313

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2360815

关键词

Graphene; interconnects; conduction; hexagonal boron nitride; heterostructure

资金

  1. National Science Foundation [1162312, 1028267]
  2. Semiconductor Research Corporation, Research Triangle Park, NC, USA
  3. Div Of Civil, Mechanical, & Manufact Inn
  4. Directorate For Engineering [1162312] Funding Source: National Science Foundation
  5. Div Of Electrical, Commun & Cyber Sys
  6. Directorate For Engineering [1028267] Funding Source: National Science Foundation

向作者/读者索取更多资源

Dual-layer graphene (DLG) interconnects with hexagonal boron nitride (h-BN) as intercalated insulating layer have been demonstrated. The DLG employs graphene grown by chemical vapor deposition process with h-BN serving as a barrier preventing interlayer scattering, which degrades carrier transport in multilayer graphene. The conductive behavior in dual-layer structures is compared with monolayer graphene and randomly stacked bilayer graphene. Reduced resistance is observed in DLG, which exhibits higher current-carrying capacity and maximum power density. In addition, DLG wire is shown to be robust under constant voltage stressing (10 V) at an elevated temperature (150 degrees C) with the mean time to failure similar to 75 times higher than that of stacked bilayer graphene wires.

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