Article
Engineering, Electrical & Electronic
Jeongho Lee, Jidong Jin, Seohyun Maeng, Gisang Choi, Hayoung Kim, Jaekyun Kim
Summary: This study investigates the performance of indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures. The results show that bilayer-channel ITZO TFTs exhibit enhanced electrical performance and bias stress stability compared to single-channel ITZO TFTs. The electrical properties of the bilayer-channel films can be fine-tuned by adjusting their oxygen stoichiometry using an oxygen-compensated capping layer.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Wei Zhong, Liangyun Kang, Sunbin Deng, Lei Lu, Ruohe Yao, Linfeng Lan, Hoi Sing Kwok, Rongsheng Chen
Summary: The study found that ITZO thin-film transistors with a scandium oxide (Sc2O3) passivation layer showed excellent electrical performance and stability, especially under negative bias temperature stress and positive bias temperature stress. In contrast, devices with an aluminum oxide (Al2O3) passivation layer exhibited poorer stability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Sung-Hwan Choi
Summary: Amorphous indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) have shown significant potential for application in transparent and flexible electronic devices. A novel TFT design with ITO S/D electrode layer and co-sputtered IGZO and ITO thin films has demonstrated superior electric characteristics compared to conventional ITO electrodes, due to lower contact and channel resistance and additional oxygen vacancies at the IGZO channel region. The proposed IGZO TFT with excellent electrical properties is expected to promote the application of TFTs in advanced displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Kishwar Mashooq, Jaesung Jo, Rebecca L. Peterson
Summary: This study presents the use of a floating metal cap layer and surface passivation to significantly improve the effective mobility and ON-OFF current ratio of p-type SnO TFTs. A record high p-type SnO TFT mobility of 19.1 cm(2)V(-1)s(-1) was achieved using a Ni/Au capping layer. The use of a bilayer TFT structure and appropriate surface passivation led to an approximately 8-fold improvement in the ON-OFF current ratio of SnO TFTs. Additionally, SnO bilayer TFTs exhibited more robust behavior to gate-bias stress compared to traditional SnO TFTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Jeonga Lee, Cheol Hee Choi, Taikyu Kim, Jaeseok Hur, Min Jae Kim, Eun Hyun Kim, Jun Hyung Lim, Youngho Kang, Jae Kyeong Jeong
Summary: The study found that doping with hydrogen (H) into oxygen sites (HO) can significantly improve the performance of amorphous In-Ga-Zn-Sn oxide (aIGZTO) thin-film transistors (TFTs).
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Bing Yang, Gang He, Wenhao Wang, Yongchun Zhang, Chong Zhang, Yufeng Xia, Xiaofen Xu
Summary: The study found that ytterbium oxide and ZnSnO thin films can be used to enhance the performance of ZnSnO-based thin film transistors, with superior electrical properties and recoverable performance after aging. The use of water molecules as electron donors can improve device performance, and samples processed at different temperatures require different optimization strategies.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Bing Yang, Gang He, Qian Gao, Wenhao Wang, Yongchun Zhang, Yufeng Xia, Xiaofen Xu, Leini Wang, Miao Zhang
Summary: This study focused on preparing solution-driven DyOx films to function as the dielectric layer for high-performance InZnO/DyOx thin film transistors (TFTs). Results showed that air-annealed InZnO/DyOx TFTs exhibited improved electrical performance and high stability in various environments, indicating potential applications in flexible transparent electronics with low power consumption.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Caihao Deng, Linfeng Lan, Penghui He, Yaping Li, Xiao Li, Siting Chen, Junbiao Peng
Summary: This article investigates the effect of incorporating wide bandgap Ga2O3 into In2O3 on the NBIS stability of oxide TFTs, finding a tradeoff between mobility and stability. Increasing Ga2O3 concentration leads to improved NBIS stability but decreased mobility, attributed to bandgap widening and reduced sensitivity to incident white light.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Kaizhen Han, Subhranu Samanta, Shengqiang Xu, Ying Wu, Xiao Gong
Summary: The study found that by reducing the equivalent oxide thickness, a temperature-independent mu(eff) can be achieved in the high field or high carrier concentration regime, while a strong temperature dependency is observed in the low field or low carrier concentration regime. Additionally, the relationship between EOT scaling and the gate bias voltage at which E-F equals to E-M was studied, revealing that α-IGZO TFTs can achieve high performance in low-power applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Xinnan Zhang, Lei Xu, Ruyu Liang, Mengzhen Hu, Jiali Ren, Shijun Luo, Zengcai Song, Wenpeng Yang, Zhihua Zhu
Summary: This study achieves enhanced mobility and stability of metal-oxide thin-film transistors by controlling the sputtering power and indium content. Optimizing the ratio of indium doping can improve both mobility and stability by reducing defects and improving interfacial quality.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Environmental Sciences
Nidhi Puri, Anjali Gupta
Summary: Various pesticides and organic compounds generated as a result of rapid industrialization and pharmaceutical companies pose a major threat to the environment. Novel photocatalysts based on zinc oxide and titanium oxide exhibit great potential towards absorption of these organic pollutants from wastewater. However, several limitations like poor affinity, particle agglomeration, high band gap, and recovery issues need to be addressed to enhance their efficiency and make them cost effective and sustainable.
ENVIRONMENTAL RESEARCH
(2023)
Article
Materials Science, Multidisciplinary
Ziyuan Wang, Sang-Hwa Jeon, Yu-Jin Hwang, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Summary: ZTO TFTs with an Sn/(Sn+Zn) ratio of 0.4 exhibit the highest saturation mobility, lowest subthreshold swing and hysteresis, as well as outstanding positive bias stability, while the negative bias stress-induced instability gradually increases with the proportion of tin due to the ionization of oxygen vacancies. These results will aid in optimizing the composition ratio in rare-metal-free oxide semiconductors for next-generation low-cost electronics.
Article
Materials Science, Multidisciplinary
Kuan-Ju Zhou, Po-Hsun Chen, Yu-Zhe Zheng, Mao-Chou Tai, Yu-Xuan Wang, Ya-Ting Chien, Pei-Jun Sun, Hui-Chun Huang, Ting-Chang Chang, Simon M. Sze
Summary: This study introduces a thin-film transistor with a heterogeneous channel structure into oxide semiconductors to improve their electrical properties, resulting in high mobility and lower subthreshold swing. By using a Sn-doped indium gallium zinc oxide middle layer in the channel, the energy band, localized states, and deep level traps are effectively reduced. Furthermore, a buried channel design with a higher Zn content in the top and bottom layers is employed to enhance the overall properties of the devices. By optimizing the operating parameters, a high sensitivity, ultra-high-endurance phototransistor is developed, effectively enhancing the reliability of UV sensing.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Materials Science, Multidisciplinary
Zhenyuan Xiao, Jidong Jin, Jeongho Lee, Gisang Choi, Xiaoyu Lin, Jiawei Zhang, Jaekyun Kim
Summary: This study investigates the effects of an oxygen-compensated capping layer (CCL) on the electrical performance and stability of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The results show that the oxygen CCL significantly improves the electrical properties and stability of dual-channel ITZO TFTs under different stress modes.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Chemistry, Physical
Gwang-Bok Kim, Nuri On, Taikyu Kim, Cheol Hee Choi, Jae Seok Hur, Jun Hyung Lim, Jae Kyeong Jeong
Summary: In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) films with a single spinel phase are successfully grown at a low temperature (300 degrees C) through careful cation composition design and a catalytic chemical reaction. Thin-film transistors (TFTs) with amorphous In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers show reasonable mobility, while TFTs with polycrystalline spinel In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers exhibit high field-effect mobility and excellent stability.
Article
Engineering, Electrical & Electronic
Kyoung-Moon Yu, Hyung-Min Ji, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Su-Jin Choi, Jong-Gyu Cheon, Jin-Hyun Kim, Sang-Woo Kim, Seong-Yong Cho, Rino Choi
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Physics, Applied
Seong-Yong Cho, Sei-Yong Kim, Sohee Jeon, Rino Choi, Jeong-Hwan Lee
APPLIED PHYSICS LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Tae In Lee, Manh-Cuong Nguyen, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Wan Sik Hwang, Hyun-Young Yu, Rino Choi, Byung Jin Cho
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Energy & Fuels
Sara Pouladi, Mojtaba Asadirad, Seung Kyu Oh, Shahab Shervin, Jie Chen, Weijie Wang, Cuong-Nguyen Manh, Rino Choi, Jiyoung Kim, Devendra Khatiwada, Monika Rathi, Pavel Dutta, Venkat Selvamanickam, Jae-Hyun Ryou
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2019)
Article
Materials Science, Multidisciplinary
Mingyu Kim, Seong-Yong Cho, Youn-Seob Shin, Yeong-Cheol Seok, Hye-Won Kim, Ji-Yeon Yoon, Rino Choi, Jeong-Hwan Lee
ELECTRONIC MATERIALS LETTERS
(2020)
Article
Chemistry, Physical
Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Su Min Hwang, Namhun Kim, Yong Chan Jung, Akshay Sahota, Kihyun Kim, Hyun-Yong Yu, Pil-Ryung Cha, Chadwin D. Young, Rino Choi, Jinho Ahn, Jiyoung Kim
Article
Chemistry, Physical
Yong Chan Jung, Su Min Hwang, Dan N. Le, Aswin L. N. Kondusamy, Jaidah Mohan, Sang Woo Kim, Jin Hyun Kim, Antonio T. Lucero, Arul Ravichandran, Harrison Sejoon Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Daniel Alvarez, Jeff Spiegelman, Jiyoung Kim
Article
Engineering, Electrical & Electronic
Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Hye-Won Kim, Jiyeon Yoon, Young-Chol Seok, Nam-Hun Kim, Sang-Woo Kim, Rino Choi
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Nanoscience & Nanotechnology
An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Seongyong Cho, Anh-Duy Nguyen, Hyewon Kim, Yeongcheol Seok, Jiyeon Yoon, Rino Choi
Article
Materials Science, Multidisciplinary
Yong Chan Jung, Jaidah Mohan, Su Min Hwang, Jin-Hyun Kim, Dan N. Le, Akshay Sahota, Namhoon Kim, Heber Hernandez-Arriaga, Jean-Francois Veyan, Harrison Sejoon Kim, Si Joon Kim, Rino Choi, Jiyoung Kim
Summary: Utilizing a novel combinatorial ALD technique is an efficient method for studying ferroelectric changes in terms of doping and composition of HfO2-based ferroelectric thin films. Systematic study of the HfxZr1-xO2 combinatorial library clearly demonstrates the ferroelectric-antiferroelectric transition. Fabrication of TiN/HfxZr1-xO2/TiN capacitors further validates the experimental results.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Manh-Cuong Nguyen, Sihyun Kim, Kitae Lee, Ji-Yong Yim, Rino Choi, Daewoong Kwon
Summary: The HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) fabricated on a silicon-on-insulator substrate showed improved performance and durability after high-pressure forming gas annealing, leading to superior endurance exceeding 10(10) cycles and robust retention behavior. Appropriate thermal treatment for the interlayer and ferroelectric material significantly enhanced FeFET performance and reliability.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Manh-Cuong Nguyen, Jiyeon Yoon, An Hoang-Thuy Nguyen, Yeongcheol Seok, Namhun Kim, Hyewon Kim, Sangwoo Kim, Rino Choi
Summary: This study successfully utilized deep ultraviolet laser annealing to fabricate upper-layer poly-Silicon devices without degrading the performance of lower-layer devices. By connecting upper and lower layer devices through interlayer vias, a current-starved ring oscillator was formed, showing a reasonable performance improvement in the bottom layer circuits.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Harrison Sejoon Kim, Akshay Sahota, Jaidah Mohan, Antonio T. Lucero, Yong Chan Jung, Minji Kim, Jang-Sik Lee, Rino Choi, Si Joon Kim, Jiyoung Kim
Summary: This study addresses common drawbacks in threshold switching devices in cross-point memory arrays by lightly doping the switching layer with silver to improve threshold voltage variability and cycling endurance. Limiting the amount of silver improved switching characteristics. Different mechanisms causing device failure were also discussed, with an unlimited silver source leading to short-circuited failures and a limited silver source resulting in open-circuit failures after repeated measurements.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Beak, Rino Choi
Summary: Individual charge traps in the gate stack of gate-all-around field-effect-transistors have been identified through their random telegraph noise (RTN) characteristics in the time and frequency domains. The charge traps were determined to be the excited states of oxygen vacancies in the dielectric located 3 nm away from the interface, based on capture/emission time constant and corner frequency measurements. Both time domain and frequency domain RTN measurements yielded identical results.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2021)
Article
Engineering, Electrical & Electronic
Jin-Hyun Kim, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Sang-Woo Kim, Su-Jin Choi, Jong-Gyu Cheon, Hyung-Min Ji, Kyoung-Moon Yu, Seong-Yong Cho, Rino Choi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2019)
