Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

(2011) Christophe Avis et al.   JOURNAL OF MATERIALS CHEMISTRY

Effect of Zr addition on ZnSnO thin-film transistors using a solution process

(2010) You Seung Rim et al.   APPLIED PHYSICS LETTERS

Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

(2010) Pradipta K. Nayak et al.   APPLIED PHYSICS LETTERS

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

(2010) Mamoru Furuta et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors

(2010) Kyung-Bae Park et al.   IEEE ELECTRON DEVICE LETTERS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

(2009) Toshio Kamiya et al.   Journal of Display Technology

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

(2008) Takashi Hirao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth of Crystalline Zinc Oxide Thin Films by Fine-Channel-Mist Chemical Vapor Deposition

(2008) Toshiyuki Kawaharamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS