Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect

Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications

(2009) Hyejung Choi et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

(2008) Myeongbum Pyun et al.   APPLIED PHYSICS LETTERS

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

(2008) H. B. Lv et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

(2008) M. Yin et al.   IEEE ELECTRON DEVICE LETTERS

Controlled local filament growth and dissolution in Ag–Ge–Se

(2008) Christina Schindler et al.   Physica Status Solidi-Rapid Research Letters