标题
Electrostatics of Ultimately Thin-Body Tunneling FET Using Graphene Nanoribbon
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 4, Pages 431-433
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-02-01
DOI
10.1109/led.2010.2103372
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric
- (2010) Costin Anghel et al. APPLIED PHYSICS LETTERS
- A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel
- (2010) Kai-Tak Lam et al. IEEE ELECTRON DEVICE LETTERS
- Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs
- (2010) Sai-Kong Chin et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes
- (2010) Gengchiau Liang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Atomically precise bottom-up fabrication of graphene nanoribbons
- (2010) Jinming Cai et al. NATURE
- Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
- (2009) Mathieu Luisier et al. APPLIED PHYSICS LETTERS
- Electronic structure and band-gap modulation of graphene via substrate surface chemistry
- (2009) Philip Shemella et al. APPLIED PHYSICS LETTERS
- Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
- (2009) Siyuranga O. Koswatta et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
- (2009) Pei Zhao et al. NANO LETTERS
- Narrow graphene nanoribbons from carbon nanotubes
- (2009) Liying Jiao et al. NATURE
- Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
- (2008) Osama M. Nayfeh et al. IEEE ELECTRON DEVICE LETTERS
- Graphene Nanoribbon Tunnel Transistors
- (2008) Qin Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
- (2008) Eng-Huat Toh et al. JOURNAL OF APPLIED PHYSICS
- Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
- (2008) X. Li et al. SCIENCE
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