Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

(2010) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures

(2010) M. Azize et al.   JOURNAL OF APPLIED PHYSICS

Formation and characterization of 4-inch GaN-on-diamond substrates

(2009) D. Francis et al.   DIAMOND AND RELATED MATERIALS

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

(2008) V. Hoel et al.   ELECTRONICS LETTERS

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS