Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

标题
Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 9, Pages 969-971
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-08-11
DOI
10.1109/led.2010.2055821

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