High-Performance Polysilicon TFTs Using Stacked $ \hbox{Pr}_{2}\hbox{O}_{3}$/Oxynitride Gate Dielectric

标题
High-Performance Polysilicon TFTs Using Stacked $ \hbox{Pr}_{2}\hbox{O}_{3}$/Oxynitride Gate Dielectric
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 4, Pages 353-356
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2008-03-28
DOI
10.1109/led.2008.917119

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