Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO2/Si nanofilms

标题
Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO2/Si nanofilms
作者
关键词
-
出版物
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 33, Issue 1, Pages 010602
出版商
American Vacuum Society
发表日期
2014-12-24
DOI
10.1116/1.4904496

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