Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

标题
Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
作者
关键词
-
出版物
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 33, Issue 2, Pages 021204
出版商
American Vacuum Society
发表日期
2015-01-10
DOI
10.1116/1.4905735

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